- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄382346 > MPS650ZL1 (ON SEMICONDUCTOR) Amplifier Transistors PDF資料下載
參數(shù)資料
| 型號(hào)： | MPS650ZL1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Amplifier Transistors |
| 中文描述： | 2000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | CASE 29-11, TO-226, 3 PIN |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大小： | 111K |
| 代理商： | MPS650ZL1 |
MPS650, MPS651, NPN MPS750, MPS751, PNP
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector
Emitter Breakdown Voltage (Note 1)
(I
C
= 10 mAdc, I
B
= 0)
MPS650, MPS750
MPS651, MPS751
V
(BR)CEO
40
60
Vdc
Collector
Base Breakdown Voltage
(I
C
= 100 Adc, I
E
= 0 )
MPS650, MPS750
MPS651, MPS751
V
(BR)CBO
60
80
Vdc
Emitter
Base Breakdown Voltage
(I
C
= 0, I
E
= 10 Adc)
V
(BR)EBO
5.0
Vdc
Collector Cutoff Current
(V
CB
= 60 Vdc, I
E
= 0)
(V
CB
= 80 Vdc, I
E
= 0)
MPS650, MPS750
MPS651, MPS751
I
CBO
0.1
0.1
Adc
Emitter Cutoff Current
(V
EB
= 4.0 V, I
C
= 0)
I
EBO
0.1
Adc
ON CHARACTERISTICS
(Note 1)
DC Current Gain
(I
C
= 50 mA, V
CE
= 2.0 V)
(I
C
= 500 mA, V
CE
= 2.0 V)
(I
C
= 1.0 A, V
CE
= 2.0 V)
(I
C
= 2.0 A, V
CE
= 2.0 V)
h
FE
75
75
75
40
Collector
Emitter Saturation Voltage
(I
C
= 2.0 A, I
B
= 200 mA)
(I
C
= 1.0 A, I
B
= 100 mA)
V
CE(sat)
0.5
0.3
Vdc
Base
Emitter On Voltage (I
C
= 1.0 A, V
CE
= 2.0 V)
V
BE(on)
1.0
Vdc
Base
Emitter Saturation Voltage (I
C
= 1.0 A, I
B
= 100 mA)
V
BE(sat)
1.2
Vdc
SMALL
SIGNAL CHARACTERISTICS
Current
Gain
Bandwidth Product (Note 2)
(I
C
= 50 mAdc, V
CE
= 5.0 Vdc, f = 100 MHz)
f
T
75
MHz
1. Pulse Test: Pulse Width
≤
300 s, Duty Cycle = 2.0%.
2. f
T
is defined as the frequency at which |h
fe
| extrapolates to unity.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MPS650ZL1G | Amplifier Transistors |
| MPS651G | Amplifier Transistors |
| MPS651RLRA | Amplifier Transistors |
| MPS651RLRAG | Amplifier Transistors |
| MPS6729 | One Watt Amplifier Transistor (PNP Silicon) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MPS650ZL1G | 功能描述:兩極晶體管 - BJT 2A 60V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS651 | 功能描述:兩極晶體管 - BJT NPN Transistor Medium Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS651_D26Z | 功能描述:兩極晶體管 - BJT NPN Transistor Medium Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS651_Q | 功能描述:兩極晶體管 - BJT NPN Transistor Medium Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS6511 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 100MA I(C) | TO-92 |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。