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參數資料
| 型號： | MPS6521RL1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | TO-226AA, 3 PIN |
| 文件頁數： | 1/11頁 |
| 文件大小： | 480K |
| 代理商： | MPS6521RL1 |
Amplifier Transistors
MAXIMUM RATINGS
Rating
Symbol
NPN
PNP
Unit
Collector–Emitter Voltage
MPS6521
MPS6523
VCEO
25
—
25
Vdc
Collector–Base Voltage
MPS6521
MPS6523
VCBO
40
—
25
Vdc
Emitter–Base Voltage
VEBO
4.0
Vdc
Collector Current — Continuous
IC
100
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25
°C
PD
625
5.0
mW
mW/
°C
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
1.5
12
Watts
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
(Printed Circuit Board Mounting)
RqJA
200
°C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 0.5 mAdc, IB = 0)
V(BR)CEO
25
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
4.0
—
Vdc
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
MPS6521
(VCB = 20 Vdc, IE = 0)
MPS6523
ICBO
—
0.05
mAdc
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 1
826
Publication Order Number:
MPS6521/D
NPN
MPS6521
PNP
MPS6523
*ON Semiconductor Preferred Device
CASE 29–11, STYLE 1
TO–92 (TO–226AA)
1
2
3
*
Voltage and current are negative
for PNP transistors
COLLECTOR 3
2
BASE
1 EMITTER
COLLECTOR 3
2
BASE
1 EMITTER
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MPS6521RLRA | 功能描述:兩極晶體管 - BJT 100mA 40V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS6521RLRAG | 功能描述:兩極晶體管 - BJT 100mA 40V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS6522 | 功能描述:兩極晶體管 - BJT PNP Gen Pur SS RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS6523 | 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS6523_01 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:PNP General Purpose Amplifier |
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