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參數資料
| 型號： | MPS6521RLRAG |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Amplifier Transistors |
| 中文描述： | 100 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | LEAD FREE, CASE 29-11, TO-226, 3 PIN |
| 文件頁數： | 1/11頁 |
| 文件大小： | 174K |
| 代理商： | MPS6521RLRAG |
Semiconductor Components Industries, LLC, 2006
March, 2006 Rev. 3
1
Publication Order Number:
MPS6521/D
MPS6521 (NPN)
MPS6523 (PNP)
MPS6521 is a Preferred Device
Amplifier Transistors
Features
Voltage and Current are Negative for PNP Transistors
PbFree Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
NPN
PNP
Unit
CollectorEmitter Voltage
MPS6521
MPS6523
V
CEO
25
25
Vdc
CollectorBase Voltage
MPS6521
MPS6523
V
CBO
40
25
Vdc
EmitterBase Voltage
V
EBO
4.0
Vdc
Collector Current Continuous
I
C
100
mAdc
Total Device Dissipation @ T
A
= 25
°
C
Derate above 25
°
C
P
D
625
5.0
mW
mW/
°
C
Total Device Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
1.5
12
W
mW/
°
C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
55 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, JunctiontoAmbient
(Printed Circuit Board Mounting)
R
JA
200
°
C/W
Thermal Resistance, JunctiontoCase
R
JC
83.3
°
C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MPS6521RLRA
MPS6521RLRAG
TO92
TO92
(PbFree)
2000/Tape & Reel
2000/Tape & Reel
Device
Package
Shipping
MPS6521
TO92
5000 Units/Box
MPS6521G
TO92
(PbFree)
5000 Units/Box
MPS652x = Device Code
x = 1 or 3
= Assembly Location
= Year
= Work Week
= PbFree Package
A
Y
WW
(Note: Microdot may be in either location)
Preferred
devices are recommended choices for future use
and best overall value.
ORDERING INFORMATION
TO92
CASE 2911
STYLE 1
1
23
MARKING
DIAGRAM
MPS
652x
AYWW
COLLECTOR
3
2
BASE
1
EMITTER
COLLECTOR
3
2
BASE
1
EMITTER
MPS6523
MPS6523G
TO92
TO92
(PbFree)
5000 Units/Box
5000 Units/Box
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| MPS6522 | 功能描述:兩極晶體管 - BJT PNP Gen Pur SS RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS6523 | 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS6523_01 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:PNP General Purpose Amplifier |
| MPS6523_D26Z | 功能描述:兩極晶體管 - BJT PNP Gen Purp Amp RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS6523_Q | 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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