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參數資料
| 型號： | MPS6601 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Amplifier Transistors |
| 中文描述： | 1000 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-226AA |
| 文件頁數： | 1/8頁 |
| 文件大?。?/td> | 246K |
| 代理商： | MPS6601 |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1996
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
MPS6601/6651
MPS6602/6652
VCEO
25
40
Vdc
Collector–Base Voltage
MPS6601/6651
MPS6602/6652
VCBO
25
30
Vdc
Emitter–Base Voltage
VEBO
IC
PD
4.0
Vdc
Collector Current — Continuous
1000
mAdc
Total Device Dissipation @ TA = 25
°
C
Derate above 25
°
C
625
5.0
mW
mW/
°
C
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
PD
1.5
12
Watts
mW/
°
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to
+150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
RJA(1)
RJC
Max
Unit
Thermal Resistance, Junction to Ambient
200
°
C/W
Thermal Resistance, Junction to Case
83.3
°
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
MPS6601/6651
MPS6602/6652
V(BR)CEO
25
40
—
—
Vdc
Collector–Base Breakdown Voltage
(IC = 100
μ
Adc, IE = 0)
MPS6601/6651
MPS6602/6652
V(BR)CBO
25
40
—
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 10
μ
Adc, IC = 0)
V(BR)EBO
4.0
—
Vdc
Collector Cutoff Current
(VCE = 25 Vdc, IB = 0)
(VCE = 30 Vdc, IB = 0)
MPS6601/6651
MPS6602/6652
ICES
—
—
0.1
0.1
μ
Adc
Collector Cutoff Current
(VCB = 25 Vdc, IE = 0)
(VCB = 30 Vdc, IE = 0)
MPS6601/6651
MPS6602/6652
ICBO
—
—
0.1
0.1
μ
Adc
1. RJA is measured with the device soldered into a typical printed circuit board.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MPS6601/D
SEMICONDUCTOR TECHNICAL DATA
*Motorola Preferred Device
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
1
23
Voltage and current are negative
for PNP transistors
COLLECTOR
3
2
BASE
1
EMITTER
COLLECTOR
3
2
BASE
1
EMITTER
NPN
PNP
相關PDF資料 |
PDF描述 |
|---|---|
| MPS6601 | NPN (AMPLIFIER TRANSISTOR) |
| MPS6602 | NPN (AMPLIFIER TRANSISTOR) |
| MPS6651 | PNP (AMPLIFIER TRANSISTOR) |
| MPS6601 | Amplifier Transistors |
| MPS6602 | Amplifier Transistors |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MPS6601_07 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Amplifier Transistors |
| MPS6601G | 功能描述:兩極晶體管 - BJT 1A 25V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS6601RLRA | 功能描述:兩極晶體管 - BJT 1A 25V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS6601RLRAG | 功能描述:兩極晶體管 - BJT 1A 25V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS6602 | 功能描述:兩極晶體管 - BJT 1A 30V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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