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參數資料
| 型號： | MPS6602RLRAG |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Amplifier Transistors |
| 中文描述： | 1000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | LEAD FREE, CASE 29-11, TO-226, 3 PIN |
| 文件頁數： | 1/8頁 |
| 文件大小： | 87K |
| 代理商： | MPS6602RLRAG |
Semiconductor Components Industries, LLC, 2006
June, 2006 Rev. 4
1
Publication Order Number:
MPS6601/D
MPS6601, MPS6602 (NPN)
MPS6651, MPS6652 (PNP)
MPS6602 and MPS6652 are Preferred Devices
Amplifier Transistors
Features
Voltage and Current are Negative for PNP Transistors
PbFree Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
MPS6601/6651
MPS6602/6652
V
CEO
25
40
Vdc
CollectorBase Voltage
MPS6601/6651
MPS6602/6652
V
CBO
25
30
Vdc
EmitterBase Voltage
V
EBO
4.0
Vdc
Collector Current Continuous
I
C
1000
mAdc
Total Device Dissipation @ T
A
= 25
°
C
Derate above 25
°
C
P
D
625
5.0
W
mW/
°
C
Total Device Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
1.5
12
W
mW/
°
C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
55 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, JunctiontoAmbient
(Note 1)
R
JA
200
°
C/W
Thermal Resistance, JunctiontoCase
R
JC
83.3
°
C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. R
JA
is measured with the device soldered into a typical printed circuit board.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
MPS66xy = Device Code
x = 0 or 5
y = 1 or 2
A
= Assembly Location
Y
= Year
WW
= Work Week
= PbFree Package
(Note: Microdot may be in either location)
Preferred
devices are recommended choices for future use
and best overall value.
TO92
CASE 2911
STYLE 1
1
23
MARKING DIAGRAM
MPS
66xy
AYWW
COLLECTOR
3
2
BASE
1
EMITTER
COLLECTOR
3
2
BASE
1
EMITTER
NPN
PNP
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
ORDERING INFORMATION
相關PDF資料 |
PDF描述 |
|---|---|
| MPS6651G | Amplifier Transistors |
| MPS6652G | Amplifier Transistors |
| MPS6724G | One Watt Darlington Transistors NPN Silicon |
| MPS6724RLRA | One Watt Darlington Transistors NPN Silicon |
| MPS6724RLRAG | One Watt Darlington Transistors NPN Silicon |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MPS66-1000 | 功能描述:以太網和電信連接器 6P6C SHIELDED RoHS:否 制造商:Pulse 產品:Modular Jacks 性能類別: USOC 代碼:RJ45 位置/觸點數量: 安裝風格:Through Hole 端口數量:1 x 1 型式:Female 屏蔽: 電流額定值: 電壓額定值: 觸點電鍍: 外殼材料:Thermoplastic IP 等級: |
| MPS6651 | 功能描述:兩極晶體管 - BJT 1A 25V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS6651G | 功能描述:兩極晶體管 - BJT 1A 25V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS6652 | 功能描述:兩極晶體管 - BJT HIGH CRNT AMP TRNSTR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS6652G | 功能描述:兩極晶體管 - BJT 1A 30V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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