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參數(shù)資料
| 型號： | MPS6727 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | One Watt Amplifier Transistor(PNP Silicon) |
| 中文描述： | 1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | CASE 29-05, TO-226AE, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 87K |
| 代理商： | MPS6727 |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
MPS6726
MPS6727
VCEO
–30
–40
Vdc
Collector–Base Voltage
MPS6726
MPS6727
VCBO
–40
–50
Vdc
Emitter–Base Voltage
VEBO
IC
PD
–5.0
Vdc
Collector Current — Continuous
–1.0
Adc
Total Device Dissipation @ TA = 25
°
C
Derate above 25
°
C
1.0
8.0
Watts
mW/
°
C
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
PD
2.5
20
Watts
mW/
°
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RJA
RJC
125
°
C/W
Thermal Resistance, Junction to Case
50
°
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –10 mAdc, IB = 0)
MPS6726
MPS6727
V(BR)CEO
–30
–40
—
—
Vdc
Collector–Base Breakdown Voltage
(IC = –100 Adc, IE = 0)
MPS6726
MPS6727
V(BR)CBO
–40
–50
—
—
Vdc
Emitter–Base Breakdown Voltage
(IE = –100 Adc, IC = 0)
V(BR)EBO
–5.0
—
Vdc
Collector Cutoff Current
(VCB = –40 Vdc, IE = 0)
(VCB = –50 Vdc, IE = 0)
MPS6726
MPS6727
ICBO
—
—
–0.1
–0.1
μ
Adc
Emitter Cutoff Current
(VEB = –5.0 Vdc, IC = 0)
IEBO
—
–0.1
μ
Adc
Order this document
by MPS6726/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–05, STYLE 1
TO–92 (TO–226AE)
1
23
COLLECTOR
3
2
BASE
1
EMITTER
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相關代理商/技術參數(shù) |
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| MPS6727G | 功能描述:兩極晶體管 - BJT 1A 50V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS6729 | 功能描述:兩極晶體管 - BJT 500mA 80V 1W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS6729G | 功能描述:兩極晶體管 - BJT 500mA 80V 1W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS70316CIN WAF | 制造商:Texas Instruments 功能描述: |
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