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參數資料
型號: MPS6727RLRM
廠商: ON SEMICONDUCTOR
元件分類: 小信號晶體管
英文描述: 1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: PLASTIC, TO-226AE, 3 PIN
文件頁數: 1/34頁
文件大小: 321K
代理商: MPS6727RLRM
2–611
Motorola Small–Signal Transistors, FETs and Diodes Device Data
One Watt Amplifier Transistor
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
MPS6726
MPS6727
VCEO
–30
–40
Vdc
Collector – Base Voltage
MPS6726
MPS6727
VCBO
–40
–50
Vdc
Emitter – Base Voltage
VEBO
–5.0
Vdc
Collector Current — Continuous
IC
–1.0
Adc
Total Device Dissipation @ TA = 25°C
Derate above 25
°C
PD
1.0
8.0
Watts
mW/
°C
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
2.5
20
Watts
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
125
°C/W
Thermal Resistance, Junction to Case
RqJC
50
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = –10 mAdc, IB = 0)
MPS6726
MPS6727
V(BR)CEO
–30
–40
Vdc
Collector – Base Breakdown Voltage
(IC = –100 mAdc, IE = 0)
MPS6726
MPS6727
V(BR)CBO
–40
–50
Vdc
Emitter – Base Breakdown Voltage
(IE = –100 mAdc, IC = 0)
V(BR)EBO
–5.0
Vdc
Collector Cutoff Current
(VCB = –40 Vdc, IE = 0)
MPS6726
(VCB = –50 Vdc, IE = 0)
MPS6727
ICBO
–0.1
Adc
Emitter Cutoff Current
(VEB = –5.0 Vdc, IC = 0)
IEBO
–0.1
Adc
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MPS6726
MPS6727
CASE 29–05, STYLE 1
TO–92 (TO–226AE)
1
2
3
COLLECTOR
3
2
BASE
1
EMITTER
相關PDF資料
PDF描述
MPS6727RL1 1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPS6726RL 1000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPS6726RLRE 1000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPS6727RLRA 1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPS6726RLRM 1000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
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