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參數(shù)資料
| 型號(hào)： | MPS8550S |
| 廠商： | KEC Holdings |
| 英文描述： | EPITAXIAL PLANAR PNP TRANSISTOR (HIGH CURRENT) |
| 中文描述： | 外延平面PNP晶體管（高電流） |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 390K |
| 代理商： | MPS8550S |
2003. 3. 25
1/2
SEMICONDUCTOR
TECHNICAL DATA
MPS8550S
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 1
HIGH CURRENT APPLICATION.
FEATURE
Complementary to MPS8050S.
MAXIMUM RATING (Ta=25
)
DIM
A
MILLIMETERS
2.93 0.20
+
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
B
C
D
E
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G
1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
2
3
H
G
A
N
C
B
D
1.30 MAX
L
L
P
P
P
7
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-35V, I
E
=0
-
-
-100
nA
Emitter Cut-off Current
I
EBO
V
EB
=-6V, I
C
=0
-
-
-100
nA
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=-100 A, I
E
=0
-40
-
-
V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=-2mA, I
B
=0
-25
-
-
V
DC Current Gain
h
FE
(1)
V
CE
=-1V, I
C
=-5mA
45
170
-
h
FE
(2) (Note)
V
CE
=-1V, I
C
=-100mA
85
160
300
h
FE
(3)
V
CE
=-1V, I
C
=-800mA
40
80
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-800mA, I
B
=-80mA
-
-0.28
-0.5
V
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
=-800mA, I
B
=-80mA
-
-0.98
-1.2
V
Base-Emitter Voltage
V
BE
V
CE
=-1V, I
C
=-10mA
-
-0.66
-1.0
V
Transition Frequency
f
T
V
CE
=-10V, I
C
=-50mA
100
200
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, f=1MHz, I
E
=0
-
15
-
pF
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-40
V
Collector-Emitter Voltage
V
CEO
-25
V
Emitter-Base Voltage
V
EBO
-6
V
Collector Current
I
C
-1.5
A
Collector Power Dissipation
P
C
*
350
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
Note : h
FE
(2) Classification B:85
160 , C : 120
200 , D : 160
300
* P
C
: Package Mounted On 99.5% Alumina (10
8
0.6
)
h Rank
Type Name
Marking
Lot No.
BJ
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| MPS8550 | EPITAXIAL PLANAR PNP TRANSISTOR (HIGH CURRENT) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MPS8598 | 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS8598_Q | 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS8598G | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Amplifier Transistors Voltage and Current are Negative for PNP Transistors |
| MPS8598RLRA | 功能描述:兩極晶體管 - BJT 500mA 60V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS8598RLRAG | 功能描述:兩極晶體管 - BJT 500mA 60V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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