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參數資料
| 型號： | MPS918 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Amplifier Transistors |
| 中文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-226AA |
| 文件頁數： | 1/4頁 |
| 文件大?。?/td> | 81K |
| 代理商： | MPS918 |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
MPS918
MPS3563
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
PD
15
12
Vdc
Collector–Base Voltage
30
30
Vdc
Emitter–Base Voltage
3.0
2.0
Vdc
Collector Current — Continuous
50
mAdc
Total Device Dissipation @ TA = 25
°
C
Derate above 25
°
C
350
2.8
mW
mW/
°
C
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
PD
0.85
6.8
Watts
mW/
°
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
RJA(1)
RJC
Max
Unit
Thermal Resistance, Junction to Ambient
357
°
C/W
Thermal Resistance, Junction to Case
147
°
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(2)
(IC = 3.0 mAdc, IB = 0)
MPS918
MPS3563
V(BR)CEO
15
12
—
—
Vdc
Collector–Base Breakdown Voltage
(IC = 1.0 Adc, IE = 0)
(IC = 100 Adc, IE = 0)
Emitter–Base Breakdown Voltage
(IE = 10 Adc, IC = 0)
MPS918
MPS3563
V(BR)CBO
30
30
—
—
Vdc
MPS918
MPS3563
V(BR)EBO
3.0
2.0
—
—
Vdc
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0)
MPS918
MPS3563
ICBO
—
—
10
50
nAdc
1. RJA is measured with the device soldered into a typical printed circuit board.
2. Pulse Test: Pulse Width
300 s; Duty Cycle
1.0%.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
MPS918/D
SEMICONDUCTOR TECHNICAL DATA
*Motorola Preferred Device
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
1
23
COLLECTOR
3
2
BASE
1
EMITTER
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MPS918_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Amplifier Transistors NPN Silicon |
| MPS918G | 功能描述:兩極晶體管 - BJT 50mA 12V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS929 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:AMPLIFIER TRANSISTOR |
| MPS930 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 100MA I(C) | TO-92 |
| MPS930A | 制造商:Motorola Inc 功能描述:TRANSISTOR,BJT,NPN,45V V(BR)CEO,100MA I(C),TO-92 |
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