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參數資料
| 型號： | MPSA05 |
| 廠商： | Transys Electronics Ltd. |
| 英文描述： | 150000 SYSTEM GATE 1.8 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN |
| 中文描述： | npn型小信號晶體管 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 239K |
| 代理商： | MPSA05 |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1996
MAXIMUM RATINGS
Rating
Symbol
MPSA05
MPSA55
MPSA06
MPSA56
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
PD
60
80
Vdc
Collector–Base Voltage
60
80
Vdc
Emitter–Base Voltage
4.0
Vdc
Collector Current – Continuous
500
mAdc
Total Device Dissipation @ TA = 25
°
C
Derate above 25
°
C
625
5.0
mW
mW/
°
C
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
PD
1.5
12
Watts
mW/
°
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
RJA(1)
RJC
Max
Unit
Thermal Resistance, Junction to Ambient
200
°
C/W
Thermal Resistance, Junction to Case
83.3
°
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(2)
(IC = 1.0 mAdc, IB = 0)
MPSA05, MPSA55
MPSA06, MPSA56
V(BR)CEO
60
80
—
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 100
μ
Adc, IC = 0)
V(BR)EBO
4.0
—
Vdc
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
ICES
—
0.1
μ
Adc
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
MPSA05, MPSA55
MPSA06, MPSA56
ICBO
—
—
0.1
0.1
μ
Adc
1. RJA is measured with the device soldered into a typical printed circuit board.
2. Pulse Test: Pulse Width
300 s, Duty Cycle
2.0%.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MPSA05/D
SEMICONDUCTOR TECHNICAL DATA
*Motorola Preferred Device
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
1
23
Voltage and current are negative
for PNP transistors
COLLECTOR
3
2
BASE
1
EMITTER
COLLECTOR
3
2
BASE
1
EMITTER
NPN
PNP
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| MPSA70 | 1000000 SYSTEM GATE 1.5 VOLT FPGA |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MPS-A05 | 制造商:ON Semiconductor 功能描述: |
| MPSA05 D27Z | 制造商:Fairchild Semiconductor Corporation 功能描述:BIPOLAR TRANSISTOR NPN 60V TO-92 |
| MPSA05_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Amplifier Transistors Voltage and Current are Negative for PNP Transistors |
| MPSA05_07 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Amplifier Transistors |
| MPSA05_D26Z | 功能描述:兩極晶體管 - BJT NPN Medium Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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