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參數資料
| 型號： | MPSA12G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Darlington Transistors NPN Silicon |
| 中文描述： | 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | LEAD FREE, CASE 29-11, TO-226, 3 PIN |
| 文件頁數： | 1/3頁 |
| 文件大?。?/td> | 56K |
| 代理商： | MPSA12G |
Semiconductor Components Industries, LLC, 2006
January, 2006 Rev. 1
1
Publication Order Number:
MPSA12/D
MPSA12
Darlington Transistors
NPN Silicon
Features
PbFree Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
V
CES
20
Vdc
Emitter Base Voltage
V
EBO
10
Vdc
Total Device Dissipation @ T
A
= 25
°
C
Derate above 25
°
C
P
D
625
5.0
mW
mW/
°
C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
55 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, JunctiontoAmbient
R
JA
200
°
C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
R
S
i
n
e
n
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
COLLECTOR 3
BASE
2
EMITTER 1
MPSA12RLRP
TO92
2,000/Tape & Reel
MPSA12RLRPG
TO92
(PbFree)
2,000/Tape & Reel
MPSA12RLRA
TO92
2,000/Tape & Reel
MPSA12RLRAG
TO92
(PbFree)
2,000/Tape & Reel
Device
Package
Shipping
ORDERING INFORMATION
MPSA12
TO92
5,000 Units/Box
MPSA12G
TO92
(PbFree)
5,000 Units/Box
MPSA12 = Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
= PbFree Package
(Note: Microdot may be in either location)
TO92
CASE 2911
STYLE 1
1
23
MARKING
DIAGRAM
MPS
A12
AYWW
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| MPSA12RLRAG | Darlington Transistors NPN Silicon |
| MPSA12RLRP | Darlington Transistors NPN Silicon |
| MPSA12RLRPG | Darlington Transistors NPN Silicon |
| MPSA14RLRPG | Darlington Transistors NPN Silicon |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MPSA12P | 功能描述:達林頓晶體管 - RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MPSA12PSTOA | 功能描述:達林頓晶體管 - RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MPSA12PSTOB | 功能描述:達林頓晶體管 - RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MPSA12PSTZ | 功能描述:達林頓晶體管 - RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MPSA12RLRA | 功能描述:達林頓晶體管 NPN Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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