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參數資料
| 型號： | MPSA13D26Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1200 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件頁數： | 1/13頁 |
| 文件大小： | 843K |
| 代理商： | MPSA13D26Z |
MPSA13
/
MMBT
A13
/
PZT
A13
NPN Darlington Transistor
This device is designed for applications requiring extremely
high current gain at collector currents to 1.0 A. Sourced from
Process 05. See MPSA14 for characteristics.
MMBTA13
MPSA13
PZTA13
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCES
Collector-Emitter Voltage
30
V
VCBO
Collector-Base Voltage
30
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current - Continuous
1.2
A
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol
Characteristic
Max
Units
MPSA13
*MMBTA13
**PZTA13
PD
Total Device Dissipation
Derate above 25
°C
625
5.0
350
2.8
1,000
8.0
mW
mW/
°C
RθJC
Thermal Resistance, Junction to Case
83.3
°C/W
RθJA
Thermal Resistance, Junction to Ambient
200
357
125
°C/W
Thermal Characteristics
TA = 25°C unless otherwise noted
C
B
E
TO-92
C
B
E
SOT-23
Mark: 1M
B
C
SOT-223
E
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
1997 Fairchild Semiconductor Corporation
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MPSA13DA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 30V V(BR)CEO | CHIP |
| MPSA13DB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 30V V(BR)CEO | CHIP |
| MPSA13DC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 30V V(BR)CEO | CHIP |
| MPSA13G | 功能描述:達林頓晶體管 500mA 30V NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MPSA13G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
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