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參數資料
| 型號： | MPSA64G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Darlington Transistors PNP Silicon |
| 中文描述： | 500 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | LEAD FREE, CASE 29-11, TO-226, 3 PIN |
| 文件頁數： | 2/4頁 |
| 文件大小： | 70K |
| 代理商： | MPSA64G |
MPSA62, MPSA63, MPSA64
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
(I
C
= 100 Adc, V
BE
= 0)
MPSA62
MPSA63, MPSA64
V
(BR)CES
20
30
Vdc
Collector Cutoff Current
(V
CB
= 15 Vdc, I
E
= 0)
(V
CB
= 30 Vdc, I
E
= 0)
Emitter Cutoff Current
(V
EB
= 10 Vdc, I
C
= 0)
ON CHARACTERISTICS
(Note 1)
DC Current Gain
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc)
MPSA62
MPSA63, MPSA64
I
CBO
100
100
100
nAdc
I
EBO
nAdc
MPSA63
MPSA64
MPSA62
MPSA63
MPSA64
(I
C
= 100 mAdc, V
CE
= 5.0 Vdc)
h
FE
5,000
10,000
20,000
10,000
20,000
CollectorEmitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 0.01 mAdc)
(I
C
= 100 mAdc, I
B
= 0.1 mAdc)
BaseEmitter On Voltage
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 100 mAdc, V
CE
= 5.0 Vdc)
SMALLSIGNAL CHARACTERISTICS
CurrentGain — Bandwidth Product
(Note 2)
(I
C
= 100 mAdc, V
CE
= 5.0 Vdc, f = 100 MHz)
1. Pulse Test: Pulse Width
2. f
T
= |h
fe
| f
test
.
ORDERING INFORMATION
Device
MPSA62
MPSA63
MPSA63G
MPSA62
MPSA63, MPSA64
V
CE(sat)
1.0
1.5
Vdc
MPSA62
MPSA63, MPSA64
V
BE(on)
1.4
2.0
Vdc
MPSA63, MPSA64
f
T
125
MHz
300 s; Duty Cycle
2.0%.
Package
TO92
TO92
TO92
(PbFree)
Shipping
5000 Units / Bulk
5000 Units / Bulk
5000 Units / Bulk
MPSA63RLRA
MPSA63RLRAG
TO92
TO92
(PbFree)
2000 / Tape & Reel
2000 / Tape & Reel
MPSA63RLRM
MPSA63RLRMG
TO92
TO92
(PbFree)
2000 / Ammo Pack
2000 / Ammo Pack
MPSA63RLRP
MPSA63RLRPG
TO92
TO92
(PbFree)
2000 / Ammo Pack
2000 / Ammo Pack
MPSA63ZL1
MPSA63ZL1G
TO92
TO92
(PbFree)
2000 / Ammo Pack
2000 / Ammo Pack
MPSA64
MPSA64G
TO92
TO92
(PbFree)
5000 Units / Bulk
5000 Units / Bulk
MPSA64RLRA
MPSA64RLRAG
TO92
TO92
(PbFree)
2000 / Tape & Reel
2000 / Tape & Reel
MPSA64RLRM
MPSA64RLRMG
TO92
TO92
(PbFree)
2000 / Ammo Pack
2000 / Ammo Pack
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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|---|---|
| MPSA64RLRA | Darlington Transistors PNP Silicon |
| MPSA64RLRAG | Darlington Transistors PNP Silicon |
| MPSA64RLRM | Darlington Transistors PNP Silicon |
| MPSA64RLRMG | Darlington Transistors PNP Silicon |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MPSA64G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
| MPSA64RLRA | 功能描述:達林頓晶體管 500mA 30V PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MPSA64RLRAG | 功能描述:達林頓晶體管 500mA 30V PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MPSA64RLRM | 功能描述:達林頓晶體管 500mA 30V PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MPSA64RLRMG | 功能描述:達林頓晶體管 500mA 30V PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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