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參數資料
| 型號： | MPSA92M |
| 廠商： | DC Components Co., Ltd. |
| 英文描述： | TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 技術參數的PNP外延平面晶體管 |
| 文件頁數： | 1/1頁 |
| 文件大小： | 211K |
| 代理商： | MPSA92M |
MPSA92M
DISCRETE SEMICONDUCTORS
R
DC COMPONENTS CO., LTD.
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use as a video output to drive color
CRT, or as a dialer circuit in electronic telephone.
Pinning
1 = Emitter
2 = Base
3 = Collector
TO-92
.022(0.56)
.014(0.36)
(.100
.050
(1.27)
.148(3.76)
.132(3.36)
Typ
.190(4.83)
.170(4.33)
(.050
.022(0.56)
.014(0.36)
.190(4.83)
.170(4.33)
(.500
2
o
Typ
5
o
Typ.
2
o
Typ
3 2 1
5
o
Typ.
Dimensions in inches and (millimeters)
Characteristic
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
T
STG
Rating
-300
-300
-5
-800
625
+150
-55 to +150
Unit
V
V
V
mA
mW
o
C
o
C
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Absolute Maximum Ratings
(T
A
=25
o
C)
Characteristic
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CEO
I
EBO
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
h
FE1
h
FE2
h
FE3
f
T
Min
-300
-300
-5
-
-
-
-
-
-
80
80
40
50
Typ
-
-
-
-
-
-0.15
-
-
-
-
-
-
-
Max
-
-
-
-5
-0.1
-
-0.7
-0.9
-1
-
-
-
-
Unit
V
V
V
μ
A
μ
A
V
V
V
V
-
-
-
MHz
Test Conditions
I
C
=-100
μ
A, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-10
μ
A, I
C
=0
V
CE
=-300V, I
B
=0
V
EB
=-3V, I
C
=0
I
C
=-30mA, I
B
=-1mA
I
C
=-100mA, I
B
=-10mA
I
C
=-20mA, I
B
=-2mA
I
C
=-100mA, I
B
=-10mA
I
C
=-10mA, V
CE
=-10V
I
C
=-100mA, V
CE
=-10V
I
C
=-200mA, V
CE
=-10V
I
C
=-10mA, V
CE
=-20V, f=100MHz
Collector-Base Breakdown Volatge
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Volatge
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
(1)
Base-Emitter Saturation Voltage
(1)
DC Current Gain
(1)
Transition Frequency
(1)Pulse Test: Pulse Width
380
μ
s, Duty Cycle
2%
Electrical Characteristics
(Ratings at 25
o
C ambient temperature unless otherwise specified)
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相關代理商/技術參數 |
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| MPSA92M_11 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH VOLTAGE TRANSISTOR |
| MPSA92M1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 500MA I(C) | SO |
| MPSA92RA | 功能描述:兩極晶體管 - BJT PNP Transistor High Voltage RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSA92RA_Q | 功能描述:兩極晶體管 - BJT PNP Transistor High Voltage RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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