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參數(shù)資料
| 型號(hào)： | MPSH24 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | VHF Transistor |
| 中文描述： | VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 124K |
| 代理商： | MPSH24 |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
PD
30
Vdc
Collector–Base Voltage
40
Vdc
Emitter–Base Voltage
4.0
Vdc
Collector Current – Continuous
50
mAdc
Total Device Dissipation @ TA = 25
°
C
Derate above 25
°
C
350
2.8
mW
mW/
°
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +135
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RJA
357
°
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
30
—
—
Vdc
Collector–Base Breakdown Voltage
(IC = 100 Adc, IE = 0)
V(BR)CBO
40
—
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 10 Adc, IC = 0)
V(BR)EBO
4.0
—
—
Vdc
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0)
ON CHARACTERISTICS
ICBO
—
—
50
nAdc
DC Current Gain
(IC = 8.0 mAdc, VCE = 10 Vdc)
SMALL–SIGNAL CHARACTERISTICS
hFE
30
—
—
—
Current–Gain — Bandwidth Product
(IC = 8.0 mAdc, VCE = 10 Vdc, f = 100 MHz)
fT
400
620
—
MHz
Collector–Base Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Ccb
—
0.25
0.36
pF
Conversion Gain
(213 MHz to 45 MHz)
(IC = 8.0 mAdc, VCC = 20 Vdc, Oscillator Injection = 150 mVrms)
(60 MHz to 45 MHz)
(IC = 8.0 mAdc, VCC = 20 Vdc, Oscillator Injection = 150 mVrms)
GC
19
24
24
29
—
—
dB
Order this document
by MPSH24/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–04, STYLE 2
TO–92 (TO–226AA)
1
23
COLLECTOR
3
1
BASE
2
EMITTER
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MPSH24_02 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:NPN General Purpose Amplifier |
| MPSH24_D26Z | 功能描述:射頻雙極小信號(hào)晶體管 NPN RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| MPSH24_Q | 功能描述:兩極晶體管 - BJT NPN RF Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSH30 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 50MA I(C) | TO-92 |
| MPSH31 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | TO-92 |
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