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參數資料
| 型號： | MPSH81D75Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | VHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件頁數： | 1/11頁 |
| 文件大小： | 721K |
| 代理商： | MPSH81D75Z |
PNP RF Transistor
This device is designed for general RF amplifier and mixer
applications to 250 mHz with collector currents in the 1.0 mA
to 30 mA range. Sourced from Process 75.
MMBTH81
MPSH81
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
20
V
VCBO
Collector-Base Voltage
20
V
VEBO
Emitter-Base Voltage
3.0
V
IC
Collector Current - Continuous
50
mA
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
MPSH81
*MMBTH81
PD
Total Device Dissipation
Derate above 25
°C
350
2.8
225
1.8
mW
mW/
°C
RθJC
Thermal Resistance, Junction to Case
125
°C/W
RθJA
Thermal Resistance, Junction to Ambient
357
556
°C/W
C
E
B
TO-92
C
B
E
SOT-23
Mark: 3D
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997 Fairchild Semiconductor Corporation
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
MPSH81
/
MMBTH81
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