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參數資料
| 型號： | MPSL01RL |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 150 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | PLASTIC, TO-226AA, 3 PIN |
| 文件頁數： | 1/35頁 |
| 文件大小： | 360K |
| 代理商： | MPSL01RL |
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2–676
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Amplifier Transistor
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
VCEO
120
Vdc
Collector – Base Voltage
VCBO
140
Vdc
Emitter – Base Voltage
VEBO
5.0
Vdc
Collector Current — Continuous
IC
150
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25
°C
PD
625
5.0
mW
mW/
°C
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
1.5
12
Watts
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
200
°C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
120
—
Vdc
Collector – Base Breakdown Voltage
(IC = 100 Adc, IE = 0 )
V(BR)CBO
140
—
Vdc
Emitter – Base Breakdown Voltage
(IE = 10 Adc, IC = 0)
V(BR)EBO
5.0
—
Vdc
Collector Cutoff Current
(VCB = 75 Vdc, IE = 0)
ICBO
—
1.0
Adc
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
IEBO
—
100
nAdc
1. Pulse Test: Pulse Width = 300
ms, Duty Cycle = 2.0%.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MPSL01
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
1
2
3
COLLECTOR
3
2
BASE
1
EMITTER
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