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參數資料
| 型號： | MPSW45 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | One Watt Darlington Transistors(NPN Silicon) |
| 中文描述： | 1000 mA, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | CASE 29-10, TO-226, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 228K |
| 代理商： | MPSW45 |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
MPSW45
MPSW45A
Unit
Collector–Emitter Voltage
VCES
VCBO
VEBO
IC
PD
40
50
Vdc
Collector–Base Voltage
50
60
Vdc
Emitter–Base Voltage
12
12
Vdc
Collector Current — Continuous
1.0
1.0
Adc
Total Device Dissipation @ TA = 25
°
C
Derate above 25
°
C
1.0
8.0
Watts
mW/
°
C
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
PD
2.5
20
Watts
mW/
°
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RJA
RJC
125
°
C/W
Thermal Resistance, Junction to Case
50
°
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 100
μ
Adc, VBE = 0)
MPSW45
MPSW45A
V(BR)CES
40
50
—
—
Vdc
Collector–Base Breakdown Voltage
(IC = 100 Adc, IE = 0)
MPSW45
MPSW45A
V(BR)CBO
50
60
—
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 10 Adc, IC = 0)
V(BR)EBO
12
—
Vdc
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
(VCB = 40 Vdc, IE = 0)
MPSW45
MPSW45A
ICBO
—
—
100
100
nAdc
Emitter Cutoff Current
(VEB = 10 Vdc, IC = 0)
IEBO
—
100
nAdc
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MPSW45/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–05, STYLE 1
TO–92 (TO–226AE)
1
23
*Motorola Preferred Device
COLLECTOR 3
BASE
2
EMITTER 1
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| MPSW51 | ne Watt High Current Transistors |
| MPSW51A | One Watt High Current Transistors(PNP Silicon) |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MPSW45_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:One Watt Darlington Transistors NPN Silicon |
| MPSW45A | 功能描述:達林頓晶體管 1A 50V NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MPSW45AG | 功能描述:達林頓晶體管 1A 50V NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MPSW45AG | 制造商:ON Semiconductor 功能描述:DARLINGTON TRANSISTOR NPN 50V TO-92 |
| MPSW45ARLRA | 功能描述:達林頓晶體管 1A 50V NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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