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參數資料
| 型號： | MPTE-12 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors |
| 中文描述： | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 封裝： | PLASTIC, MOSORB, CASE 41A-04, 2 PIN |
| 文件頁數： | 1/8頁 |
| 文件大小： | 60K |
| 代理商： | MPTE-12 |
Semiconductor Components Industries, LLC, 2002
June, 2002 – Rev. 2
1
Publication Order Number:
1N6373/D
1N6373 - 1N6381 Series
(ICTE-5 - ICTE-36,
MPTE-5 - MPTE-45)
1500 Watt Peak Power
Mosorb
Zener Transient
Voltage Suppressors
Unidirectional*
Mosorb devices are designed to protect voltage sensitive
components from high voltage, high–energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. These devices are
ON Semiconductor’s exclusive, cost-effective, highly reliable
Surmetic
axial leaded package and are ideally-suited for use in
communication systems, numerical controls, process controls,
medical equipment, business machines, power supplies and many
other industrial/consumer applications, to protect CMOS, MOS and
Bipolar integrated circuits.
Specification Features:
Working Peak Reverse Voltage Range – 5 V to 45 V
Peak Power – 1500 Watts @ 1 ms
ESD Rating of Class 3 (>16 KV) per Human Body Model
Maximum Clamp Voltage @ Peak Pulse Current
Low Leakage < 5 A Above 10 V
Response Time is Typically < 1 ns
Mechanical Characteristics:
CASE:
Void-free, transfer-molded, thermosetting plastic
FINISH:
All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
230
°
C, 1/16
″
from the case for 10 seconds
POLARITY:
Cathode indicated by polarity band
MOUNTING POSITION:
Any
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation (Note 1.)
@ T
L
≤
25
°
C
P
PK
1500
Watts
Steady State Power Dissipation
@ T
L
≤
75
°
C, Lead Length = 3/8
″
Derated above T
L
= 75
°
C
P
D
5.0
20
Watts
mW/
°
C
Thermal Resistance, Junction–to–Lead
R
JL
20
°
C/W
Forward Surge Current (Note 2.)
@ T
A
= 25
°
C
I
FSM
200
Amps
Operating and Storage
Temperature Range
T
J
, T
stg
– 65 to
+175
°
C
*Please see 1N6382 – 1N6389 (ICTE–10C – ICTE–36C, MPTE–8C – MPTE–45C)
for Bidirectional Devices
AXIAL LEAD
CASE 41A
PLASTIC
L = Assembly Location
MPTE–xx = ON Device Code
ICTE–xx = ON Device Code
1N63xx = JEDEC Device Code
YY = Year
WW = Work Week
Cathode
Anode
Device
Package
Shipping
ORDERING INFORMATION
MPTE–xx
Axial Lead
500 Units/Box
MPTE–xxRL4
Axial Lead
1500/Tape & Reel
ICTE–xx
Axial Lead
500 Units/Box
ICTE–xxRL4
Axial Lead
1500/Tape & Reel
NOTES:
1. Nonrepetitive current pulse per Figure 5 and der-
ated above T
A
= 25
°
C per Figure 2.
2. 1/2 sine wave (or equivalent square wave), PW =
8.3 ms, duty cycle = 4 pulses per minute maxi-
mum.
*1N6378 Not Available in 1500/Tape & Reel
L
ICTE
–xx
YYWW
1N63xx
Axial Lead
500 Units/Box
1N63xxRL4*
Axial Lead
1500/Tape & Reel
L
MPTE
–xx
1N
63xx
YYWW
http://onsemi.com
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MPTE-12 (1N6376) | 功能描述:TVS 二極管 - 瞬態電壓抑制器 - RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| MPTE-12C | 制造商:MDE 制造商全稱:MDE Semiconductor, Inc. 功能描述:GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR |
| MPTE-12C (1N6384) | 功能描述:TVS 二極管 - 瞬態電壓抑制器 - RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| MPTE-12G | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:1500 Watt Peak Power Mosorb TM Zener Transient Voltage Suppressors |
| MPTE-12RL4 | 功能描述:TVS 二極管 - 瞬態電壓抑制器 12V 1500W RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
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