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參數資料
型號: MQUPS1040E3
廠商: MICROSEMI CORP-SCOTTSDALE
元件分類: 整流器
英文描述: 10 A, 40 V, SILICON, RECTIFIER DIODE
封裝: ROHS COMPLIANT, PLASTIC, POWERMITE3, 3 PIN
文件頁數: 1/4頁
文件大小: 261K
代理商: MQUPS1040E3
10 A LOW VF Schottky BARRIER RECTIFIER
WWW
.Microse
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i
.CO
M
S C O T TS DALE DIVISION
UPS1040e3
DESCRIPTION
This UPS1040e3 in the Powermite3 package is a high efficiency Schottky rectifier
that is also RoHS compliant offering high current/power capabilities previously
found only in much larger packages. They are ideal for SMD applications that
operate at high frequencies. In addition to its size advantages, the Powermite3
package includes a full metallic bottom that eliminates the possibility of solder flux
entrapment during assembly and a unique locking tab act as an efficient heat path to
the heat-sink mounting. Its innovative design makes this device ideal for use with
automatic insertion equipment.
IMPORTANT:
Forthemostcurrentdata,consultMICROSEMI’s website: http://www.microsemi.com
ABSOLUTE MAXIMUM RATINGS AT 25 C
(UNLESS OTHERWISE SPECIFIED)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
40
V
RMS Reverse Voltage
V R (RMS)
28
V
Average Rectified Output Current
Io
10
A
Non-Repetitive Peak Forward Surge Current
8.3 ms Single half sine wave Superimposed
on Rated Load@ Tc =90C
IFSM
150
A
Storage Temperature
TSTG
-55 to +150
C
Junction Temperature
TJ
-55 to +150
C
THERMAL CHARACTERISTICS
Thermal Resistance
Junction-to-case (bottom)
RθJC
3.2
C/ Watt
Junction to ambient (1)
RθJA
65
C/ Watt
(1) When mounted on FR-4 PC board using 2 oz copper with recommended minimum foot print
Powermite 3
KEY FEATUR ES
Very low thermal resistance package
RoHS Compliant with e3 suffix part
number
Guard-ring-die construction for transient
protection
Efficient heat path with Integral locking
bottom metal tab
Low forward voltage
Full metallic bottom eliminates flux
entrapment
Compatible with automatic insertion
Low profile-maximum height of 1mm
Options for screening in accordance with
MIL-PRF-19500 for JAN, JANTX, and
JANTXV are available by adding MQ,
MX, or MV prefixes respectively to part
numbers. For example, designate
MXUPS1040e3 for a JANTX (consult
factory for Tin-Lead plating).
Optional 100% avionics screening
available by adding MA prefix for 100%
temperature cycle, thermal impedance
and 24 hours HTRB (consult factory for
Tin-Lead plating)
APPLICATIONS/BENEFITS
Switching and Regulating Power
Supplies.
Silicon Schottky (hot carrier) rectifier for
minimal reverse voltage recovery
Elimination of reverse-recovery
oscillations to reduce need for EMI
filtering
Charge Pump Circuits
Reduces reverse recovery loss with low
IRM
Small foot print
190 X 270 mils (1:1 Actual size)
See mounting pad details on pg 3
M E CH ANI C A L & P ACK AGI N G
CASE: Void-free transfer molded
thermosetting epoxy compound
meeting UL94V-0
FINISH: Annealed matte-Tin plating
over copper and readily solderable per
MIL-STD-750 method 2026 (consult
factory for Tin-Lead plating)
POLARITY: See figure (left)
MARKING: S1040
WEIGHT: 0.072 gram (approx.)
Package dimension on last page
Tape & Reel option: 16 mm tape per
Standard EIA-481-B, 5000 on 13” reel
U
P
S
3
4
0
E
3
Microsemi
Scottsdale Division
Page 1
Copyright
2007
6-26-2007 REV E
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
相關PDF資料
PDF描述
MQUPS140E3 1 A, 40 V, SILICON, SIGNAL DIODE, DO-216AA
MSPUPS140E3 1 A, 40 V, SILICON, SIGNAL DIODE, DO-216AA
MR2510G 25 A, 1000 V, SILICON, RECTIFIER DIODE
MR3025G 25 A, 250 V, SILICON, RECTIFIER DIODE
MR850-G 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD
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