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參數資料
| 型號： | MR18R162GAF0-CM8 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V |
| 中文描述： | （16Mx16顯示）× 2（4/8/16）件RIMM的模塊，基于256Mb阿芯片，32秒銀行，16K/32ms參考，為2.5V |
| 文件頁數： | 1/16頁 |
| 文件大小： | 419K |
| 代理商： | MR18R162GAF0-CM8 |
Page 0
Version 1.4 July 2002
MR16R1622(4/8/G)AF0
MR18R1622(4/8/G)AF0(1)
Change History
Version 1.1 (August 2001)
* First copy.
* Based on the 1.0ver Rambus 256/288Mbit RIMM
Module Datasheet
Version 1.2 (February 2002)
* Add 1066-35 binning
Version 1.3 (April 2002)
* Add 800-40 and 1066-32 binning
* Modify
T
PD
Value of AC electrical specifications
* Modify the
Values of AC electrical specifications for RIMM Module
Version 1.4 (July 2002)
* Add 1066-32 512MB (16d RIMM Module) etc.
相關PDF資料 |
PDF描述 |
|---|---|
| MR18R162GAF0-CN9 | Cable; Cable Length:0.33m; Leaded Process Compatible:Yes; No. of Contacts:36; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes |
| MR18R162GAF0-CT9 | (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V |
| MR18R1628AF1-CN9 | (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V |
| MR18R1628AF1-CT9 | (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V |
| MR2520LG | Overvoltage Transient Suppressor |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MR18R162GAF0-CN9 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:(16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V |
| MR18R162GAF0-CT9 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:(16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V |
| MR18R162GEG0-CK8 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Key Timing Parameters |
| MR18R162GEG0-CM8 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Key Timing Parameters |
| MR18R162GEG0-CM800 | 制造商:Samsung Semiconductor 功能描述:288MRDRAM_MRDRAM MODULEX18WBGA(LF) - Bulk |
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