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參數(shù)資料
| 型號(hào)： | MR18R162GAF0-CN9 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Cable; Cable Length:0.33m; Leaded Process Compatible:Yes; No. of Contacts:36; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes |
| 中文描述： | （16Mx16顯示）× 2（4/8/16）件RIMM的模塊，基于256Mb阿芯片，32秒銀行，16K/32ms參考，為2.5V |
| 文件頁(yè)數(shù)： | 6/16頁(yè) |
| 文件大小： | 419K |
| 代理商： | MR18R162GAF0-CN9 |
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Page 5
Version 1.4 July 2002
MR16R1622(4/8/G)AF0
MR18R1622(4/8/G)AF0(1)
D
D
D
D
D
D
D
D
D
C
C
C
C
R
R
R
C
C
C
C
C
D
D
D
D
D
D
D
D
D
SIO0
SIO1
SCK
CMD
Vref
Direct RDRAM (256/288Mb)
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
U1
S
L
L
V
R
S
R
R
Vdd
Gnd
2 per
RDRAM device
0.22/0.1
μ
F
SCL
WP
SDA
A0 A1
SCL
SWP
SA0
SA1
SA2
SDA
Serial Presence Detect
Note 1. Rambus
Channel signals form a loop through
the RIMM module, with the exception of the SIO chain.
Note 2. See Serial Presence Detection Specification for
information on the SPD device and its contents.
D
D
D
D
D
D
D
D
D
C
C
C
C
R
R
R
C
C
C
U2
C
C
D
D
D
D
D
D
D
D
D
SIO0
SIO1
SCK
CMD
Vref
RDRAM Device(256/288Mb)
D
D
D
D
D
D
D
D
D
C
C
C
C
R
R
R
C
C
C
U3
C
C
D
D
D
D
D
D
D
D
D
SIO0
SIO1
SCK
CMD
Vref
RDRAM Device(256/288Mb)
D
D
D
D
D
D
D
D
D
C
C
C
C
R
R
R
C
C
C
UN
C
C
D
D
D
D
D
D
D
D
D
SIO0
SIO1
SCK
CMD
Vref
RDRAM Device(256/288Mb)
V
REF
Gnd
1 per
2 RDRAM devices
Plus one
Near Connector
V
CMOS
Gnd
1 per
2 RDRAM devices
0.22/0.1
μ
F
A2
U0
Vcc
SV
DD
0.22/0.1
μ
F
a
47K
Module
Capacity
N
512/576MB
16
256/288MB
8
128/144MB
4
64/72MB
2
a .
for 64/F : 800MHz products
0.22 μ
F : the other products
SV
DD
Gnd
0.22/0.1
μ
F
a
Figure 2: RIMM Module Functional Diagram
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MR18R162GAF0-CT9 | (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V |
| MR18R1628AF1-CN9 | (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V |
| MR18R1628AF1-CT9 | (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V |
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| MR2520LRLG | Overvoltage Transient Suppressor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MR18R162GAF0-CT9 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:(16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V |
| MR18R162GEG0-CK8 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Key Timing Parameters |
| MR18R162GEG0-CM8 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Key Timing Parameters |
| MR18R162GEG0-CM800 | 制造商:Samsung Semiconductor 功能描述:288MRDRAM_MRDRAM MODULEX18WBGA(LF) - Bulk |
| MR18R162GEG0-CT9 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Key Timing Parameters |
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