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參數資料
| 型號： | MR3025 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Medium-Current Silicon Rectifiers |
| 中文描述： | 25 A, 250 V, SILICON, RECTIFIER DIODE |
| 封裝： | Microde Button, 2 PIN |
| 文件頁數： | 4/8頁 |
| 文件大小： | 71K |
| 代理商： | MR3025 |
TRA2525 MR3025
http://onsemi.com
4
Figure 6. Thermal Response
t, TIME (ms)
300
10
1
Figure 7. Typical Capacitance
V
R
, REVERSE VOLTAGE (V)
100
10
1
0.1
10
100
1000
Figure 8. Forward Recovery Time
Figure 9. Reverse Recovery Time
I
F
, FORWARD CURRENT (A)
I
R
/I
F
, RATIO OF REVERSE TO FORWARD CURRENT
10
1
0.1
1
10
1
0.1
1
10
100
C
T
T
r
100
0.1
10
–1
10
–2
10
0
T
J
= 25
°
C
,
F
V
FR
= 2.0 V
V
FR
= 1.0 V
,
R
I
F
= 1 A
I
F
= 10 A
R
JC(t)
= R
JC
r(t)
Note 1
To determine maximum junction temperature of the diode in a given
situation, the following procedure is recommended.
The temperature of the case should be measured using a thermocou-
ple placed on the case at the temperature reference point (see the
outline drawing on page 1). The thermal mass connected to the case
is normally large enough so that it will not significantly respond to heat
surges generated in the diode as a result of pulse operation once
steady state conditions are achieved.
Using the measured value of T
C
, the junction temperature may be
determined by:
T
J
= T
C
+ T
JC
Where T
JC
is the increase in junction temperature above the case
temperature, it may be determined by:
DUTY CYCLE, D = t
p
/t
1
PEAK POWER, P
pk
is peak of an
equivalent square power pulse
P
pk
P
pk
t
p
t
1
where:
NOTE 1
T
JC
= P
pk
R
JC
[D + (1 – D) r(t
1
+ t
p
) + r(t
p
) – r(t
1
)]
r(t) = normalized value of transient thermal resistance at
time, t, from Figure 6, i.e.:
V
F
T
J
= 25
°
C
T
FR
V
FR
T
J
= 25
°
C
T
RR
I
R
0.25 I
R
I
F
r(t
1
+ t
p
) = normalized value of transient thermal resistance
at time t
1
+ t
p
.
0
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