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參數(shù)資料
型號: MR756RLG
廠商: ON SEMICONDUCTOR
元件分類: 參考電壓二極管
英文描述: High Current Lead Mounted Rectifiers
中文描述: 6 A, 600 V, SILICON, RECTIFIER DIODE
封裝: LEAD FREE, PLASTIC, CASE 194-04, 2 PIN
文件頁數(shù): 3/7頁
文件大小: 104K
代理商: MR756RLG
MR750 SERIES
http://onsemi.com
3
Figure 1. Forward Voltage
Figure 2. Maximum Surge Capability
Figure 3. Forward Voltage Temperature Coefficient
Figure 4. Typical Transient Thermal Resistance
1.8
2.4
0.6
v
F
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
700
500
20
50
10
iF
5.0
2.0
1.0
1.2
0.8
1.0
1.4
1.6
2.0
2.2
2.6
7.0
100
70
0.2
0.5
0.7
200
30
3.0
0.3
300
MAXIMUM
TYPICAL
T
J
= 25
°
C
NUMBER OF CYCLES AT 60 Hz
100
1.0
300
100
80
60
I
2.0
5.0
10
20
50
200
400
600
,
F
T
J
= 175
°
C
25
°
C
V
RRM
MAY BE APPLIED BETWEEN
EACH CYCLE OF SURGE. THE T
J
NOTED IS T
J
PRIOR TO SURGE
i
F
, INSTANTANEOUS FORWARD CURRENT (AMP)
1.0
0.2
+0.5
0
0.5
1.0
1.5
2.0
2.0
°
C
10
20
100
200
0.5
5.0
50
TYPICAL RANGE
t, TIME (SECONDS)
1.0
10
1.0
0.2
2.0
5.0
10
20
50
5.0
20
R
θ
3.0
2.0
0.5
0.3
0.1
0.2
0.3
0.5
0.7
3.0
30
7.0
70
Both leads to heat sink, with lengths as shown. Variations in R
JL(t)
below 2.0 seconds are independent of lead connections of 1/8 inch
or greater, and vary only about
±
20% from the values shown. Val-
ues for times greater than 2.0 seconds may be obtained by drawing
a curve, with the end point (at 70 seconds) taken from Figure 8, or
calculated from the notes, using the given curves as a guide. Either
typical or maximum values may be used. For R
JL(t)
values at pulse
widths less than 0.1 second, the above curve can be extrapolated
down to 10 s at a continuing slope.
T
175
°
C
25
°
C
1/2"
3/8"
1/4"
1/8"
,
J
°
HEAT SINK
L
L
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