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參數資料
| 型號： | MR858-G |
| 廠商： | SENSITRON SEMICONDUCTOR |
| 元件分類： | 整流器 |
| 英文描述： | 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 84K |
| 代理商： | MR858-G |
MR850-MR858
3.0A FAST RECOVERY RECTIFIER
Data Sheet 2728, Rev. -
Features
l
Glass Passivated Die Construction
l
Ideally Suited for Automatic Assembly
l
Low Forward Voltage Drop, High Efficiency
l
Low Power Loss
A
B
A
l
Fast Recovery Time
l
High Surge Current Capability
C
D
Mechanical Data
l
Case: Molded Plastic
l
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
l
Polarity: Cathode Band or Cathode Notch
l
Marking: Type Number
l
Mounting Position: Any
l
Weight: 0.21 grams (approx.)
Maximum Ratings and Electrical Characteristics @T
A=25°C unless otherwise specified
Characteristic
Symbol
MR850
MR851
MR852
MR854
MR856
MR858
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
100
200
400
600
800
V
RMS Reverse Voltage
VR(RMS)
35
70
140
280
420
560
V
Average Rectified Output Current
@TL = 75°C
IO
3.0
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
150
A
Forward Voltage
@I F = 3.0A
VFM
1.25
1.30
V
Peak Reverse Current
@TA = 25°C
At Rated DC Blocking Voltage
@TA = 100°C
IRM
10
200
A
Reverse Recovery Time (Note 1)
trr
100
150
nS
Typical Junction Capacitance (Note 2)
Cj
80
pF
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
°C
Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A,
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
SENSITRON
SEMICONDUCTOR
221 West Industry Court ! Deer Park, NY 11729-4681 ! (631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com
DO-201AD
Dim
Min
Max
Min
Max
A
25.4
—
1.000
—
B
8.50
9.50
0.335 0.374
C
1.20
1.30
0.047 0.051
D
5.0
5.60
0.197 0.220
All
In mm
In inch
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