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參數(shù)資料
| 型號(hào)： | MRF1508 |
| 廠商： | MOTOROLA INC |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | POWER, PLASTIC, CASE 466-02, 4 PIN |
| 文件頁(yè)數(shù)： | 1/16頁(yè) |
| 文件大小： | 202K |
| 代理商： | MRF1508 |
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LIFETIME
BUY
LAST
ORDER
30JUN02
LAST
SHIP
30DEC0
2
1
MRF1508
MOTOROLA RF DEVICE DATA
The RF MOSFET Line
RF Power Field Effect Transistor
N–Channel Enhancement–Mode Lateral MOSFETs
The MRF1508 is designed for broadband commercial and industrial
applications at frequencies to 520 MHz. The high gain and broadband
performance of this device makes it ideal for large–signal, common source
amplifier applications in 12.5 volt mobile FM equipment.
Specified Performance @ 520 MHz, 12.5 Volts
Output Power — 8 Watts
Power Gain — 14 dB
Efficiency — 60%
Characterized with Series Equivalent Large–Signal
Impedance Parameters
Excellent Thermal Stability
Capable of Handling 20:1 VSWR, @ 15.5 Vdc,
520 MHz, 2 dB Overdrive
RF Power Plastic Surface Mount Package
Broadband UHF/VHF Demonstration Amplifier
Information Available Upon Request
Available in Tape and Reel by Adding T1 Suffix to
Part Number. T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
40
Vdc
Gate–Source Voltage
VGS
±20
Vdc
Drain Current — Continuous
ID
4
Adc
Total Device Dissipation @ TC = 25°C (1)
Derate above 25
°C
PD
62.5
0.50
Watts
W/
°C
Storage Temperature Range
Tstg
– 65 to +150
°C
Operating Junction Temperature
TJ
150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
2
°C/W
(1) Calculated based on the formula PD =
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF1508/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF1508
(Cancelled)
MRF1508T1
8 W, 520 MHz, 12.5 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFET
CASE 466–02, STYLE 1
(PLD 1.5)
PLASTIC
Motorola, Inc. 1998
G
D
S
TJ– TC
R
θJC
REV 1
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PDF描述 |
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| MRF1508T1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF1508 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF1511NT1 | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF1511T1 | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF1513NT1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF15090 | 制造商:MOTOROLA 制造商全稱(chēng):Motorola, Inc 功能描述:RF POWER TRANSISTOR |
| MRF150J | 功能描述:射頻MOSFET電源晶體管 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF150MP | 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET |
| MRF151 | 功能描述:射頻MOSFET電源晶體管 5-175MHz 150Watts 50Volt Gain 18dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF1511N | 制造商:FREESCALE 制造商全稱(chēng):Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
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