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參數(shù)資料
| 型號： | MRF1511T1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | PLASTIC, PLD-1.5, CASE 466-03, 4 PIN |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 515K |
| 代理商： | MRF1511T1 |
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RF Device Data
Freescale Semiconductor
MRF1511T1
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Current
(VDS = 35 Vdc, VGS = 0)
IDSS
—
1
μAdc
Gate-Source Leakage Current
(VGS = 10 Vdc, VDS = 0)
IGSS
—
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS = 7.5 Vdc, ID = 170 μA)
VGS(th)
1.0
1.6
2.1
Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 1 Adc)
VDS(on)
—
0.4
—
Vdc
Dynamic Characteristics
Input Capacitance
(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz)
Ciss
—
100
—
pF
Output Capacitance
(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz)
Coss
—
53
—
pF
Reverse Transfer Capacitance
(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz)
Crss
—
8
—
pF
Functional Tests (In Freescale Test Fixture)
Common-Source Amplifier Power Gain
(VDD = 7.5 Vdc, Pout = 8 Watts, IDQ = 150 mA, f = 175 MHz)
Gps
10
11.5
—
dB
Drain Efficiency
(VDD = 7.5 Vdc, Pout = 8 Watts, IDQ = 150 mA, f = 175 MHz)
η
50
55
—
%
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相關代理商/技術參數(shù) |
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|---|---|
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| MRF1513NT1 | 功能描述:射頻MOSFET電源晶體管 RF LDMOS FET PLD1.5 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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| MRF1513NT1-CUT TAPE | 制造商:Freescale 功能描述:MRF1513NT1 Series 520 MHz 3 W 12.5 V Lateral N-Ch Broadband RF Power Mosfet |
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