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參數(shù)資料
| 型號： | MRF1513T1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | PLASTIC, PLD-1.5, CASE 466-02, 4 PIN |
| 文件頁數(shù)： | 5/12頁 |
| 文件大小： | 494K |
| 代理商： | MRF1513T1 |
5–83
MRF1513T1
MOTOROLA WIRELESS
RF PRODUCT DEVICE DATA
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
(VDS = 40 Vdc, VGS = 0 Vdc)
IDSS
—
1
Adc
Gate–Source Leakage Current
(VGS = 10 Vdc, VDS = 0 Vdc)
IGSS
—
1
Adc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 12.5 Vdc, ID = 60 A)
VGS(th)
1.0
1.7
2.1
Vdc
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 500 mAdc)
VDS(on)
—
0.65
—
Vdc
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 12.5 Vdc, VGS = 0, f = 1 MHz)
Ciss
—
33
—
pF
Output Capacitance
(VDS = 12.5 Vdc, VGS = 0, f = 1 MHz)
Coss
—
16.5
—
pF
Reverse Transfer Capacitance
(VDS = 12.5 Vdc, VGS = 0, f = 1 MHz)
Crss
—
2.2
—
pF
FUNCTIONAL TESTS (In Motorola Test Fixture)
Common–Source Amplifier Power Gain
(VDD = 12.5 Vdc, Pout = 3 Watts, IDQ = 50 mA, f = 520 MHz)
Gps
10
11
—
dB
Drain Efficiency
(VDD = 12.5 Vdc, Pout = 3 Watts, IDQ = 50 mA, f = 520 MHz)
η
50
55
—
%
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|---|---|
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| MRF1517NT1-CUT TAPE | 制造商:Freescale 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
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