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參數資料
型號: MRF1518T1
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: PLASTIC, PLD-1.5, CASE 466-03, 4 PIN
文件頁數: 12/20頁
文件大小: 742K
代理商: MRF1518T1
AR
C
HIVE
INF
O
RMA
TI
O
N
ARCHIVE
INFORMA
TION
RF Device Data
Freescale Semiconductor
MRF1518T1
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Current
(VDS = 40 Vdc, VGS = 0 Vdc)
IDSS
1
μAdc
Gate-Source Leakage Current
(VGS = 10 Vdc, VDS = 0 Vdc)
IGSS
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS = 12.5 Vdc, ID = 100 μA)
VGS(th)
1.0
1.6
2.1
Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 1 Adc)
VDS(on)
0.4
Vdc
Dynamic Characteristics
Input Capacitance
(VDS = 12.5 Vdc, VGS = 0, f = 1 MHz)
Ciss
66
pF
Output Capacitance
(VDS = 12.5 Vdc, VGS = 0, f = 1 MHz)
Coss
33
pF
Reverse Transfer Capacitance
(VDS = 12.5 Vdc, VGS = 0, f = 1 MHz)
Crss
4.5
pF
Functional Tests (In Freescale Test Fixture)
Common-Source Amplifier Power Gain
(VDD = 12.5 Vdc, Pout = 8 Watts, IDQ = 150 mA, f = 520 MHz)
Gps
10
11
dB
Drain Efficiency
(VDD = 12.5 Vdc, Pout = 8 Watts, IDQ = 150 mA, f = 520 MHz)
η
50
55
%
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相關代理商/技術參數
參數描述
MRF151A 功能描述:射頻MOSFET電源晶體管 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF151G 功能描述:射頻MOSFET電源晶體管 5-175MHz 300Watts 50Volt Gain 14dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF151GB 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
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MRF151GMP 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET
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