- 您現在的位置：買賣IC網 > PDF目錄382348 > MRF1550T (Motorola, Inc.) RF POWER FIELD EFFECT TRANSISTORS PDF資料下載
參數資料
| 型號： | MRF1550T |
| 廠商： | Motorola, Inc. |
| 英文描述： | RF POWER FIELD EFFECT TRANSISTORS |
| 中文描述： | 射頻電源場效應晶體管 |
| 文件頁數： | 1/12頁 |
| 文件大小： | 525K |
| 代理商： | MRF1550T |
1
MRF1550T1 MRF1550FT1
Motorola, Inc. 2003
The RF MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies to 175 MHz. The high gain and broadband performance of these devices
make them ideal for large–signal, common source amplifier applications in
12.5 volt mobile FM equipment.
Specified Performance @ 175 MHz, 12.5 Volts
Output Power — 50 Watts
Power Gain — 12 dB
Efficiency — 50%
Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 175 MHz, 2 dB Overdrive
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal Impedance Parameters
Broadband–Full Power Across the Band: 135–175 MHz
Broadband Demonstration Amplifier Information Available
Upon Request
In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
V
DSS
40
Vdc
Gate–Source Voltage
V
GS
±
20
Vdc
Drain Current — Continuous
I
D
12
Adc
Total Device Dissipation @ T
C
= 25
°
C (1)
Derate above 25
°
C
P
D
165
0.50
Watts
W/
°
C
Storage Temperature Range
T
stg
–65 to +150
°
C
Operating Junction Temperature
T
J
175
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
0.75
°
C/W
(1) Calculated based on the formula P
D
=
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF1550T1/D
SEMICONDUCTOR TECHNICAL DATA
175 MHz, 50 W, 12.5 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 1264–09, STYLE 1
TO–272
PLASTIC
MRF1550T1
CASE 1264A–02, STYLE 1
TO–272 STRAIGHT LEAD
PLASTIC
MRF1550FT1
TJ –TC
R
θ
JC
REV 6
F
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
n
.
相關PDF資料 |
PDF描述 |
|---|---|
| MRF1550FT1 | SEE A3281LUA-T |
| MRF1550T1 | CHOPPER STABILIZED LATCH W/TIN PLATING |
| MRF18030A | SEE A3282ELHLT-T |
| MRF18030ALR3 | CHOPPER STABILIZED LATCH W/TIN PLATING |
| MRF18030ALSR3 | SEE A3282EUA-T |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MRF1550T1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF157 | 功能描述:射頻MOSFET電源晶體管 5-80MHz 600Watts 50Volt Gain 21dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF1570FNT1 | 功能描述:射頻MOSFET電源晶體管 RF LDMOS TO272-6N FLAT RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF1570FT1 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
| MRF1570N | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
發布緊急采購，3分鐘左右您將得到回復。