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參數(shù)資料
| 型號： | MRF16006 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF POWER TRANSISTOR NPN SILICON |
| 中文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CASE 395C-01, 2 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 82K |
| 代理商： | MRF16006 |
1
MRF16006
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1995
The RF Line
RF Power Transistor
Designed for 28 Volt microwave large–signal, common base, Class–C CW
amplifier applications in the range 1600 – 1640 MHz.
Specified 28 Volt, 1.6 GHz Class–C Characteristics
Output Power = 6 Watts
Minimum Gain = 7.4 dB, @ 6 Watts
Minimum Efficiency = 40% @ 6 Watts
Characterized with Series Equivalent Large–Signal Parameters from
1500 MHz to 1700 MHz
Silicon Nitride Passivated
Gold Metallized, Emitter Ballasted for Long Life and Resistance to
Metal Migration
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCES
VEBO
IC
PD
60
Vdc
Emitter–Base Voltage
4.0
Vdc
Collector–Current
1.0
Adc
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
26
0.15
Watts
W/
°
C
Storage Temperature Range
Tstg
–65 to +150
°
C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case (1) (2)
R
θ
JC
6.8
°
C/W
(1) Thermal measurement performed using CW RF operating condition.
(2) Thermal resistance is determined under specified RF operating conditions by infrared measurement techniques.
Order this document
by MRF16006/D
SEMICONDUCTOR TECHNICAL DATA
CASE 395C–01, STYLE 2
6.0 WATTS, 1.6 GHz
RF POWER TRANSISTOR
NPN SILICON
REV 2
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