- 您現在的位置：買賣IC網 > PDF目錄98036 > MRF181SR1 (ON SEMICONDUCTOR) UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF資料下載
參數資料
| 型號： | MRF181SR1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CASE 458B-02, 3 PIN |
| 文件頁數： | 1/12頁 |
| 文件大小： | 143K |
| 代理商： | MRF181SR1 |
LIFETIME
BUY
LAST
ORDER
31JUN04
LAST
SHIP
31JAN05
1
MRF181SR1 MRF181ZR1
MOTOROLA RF DEVICE DATA
The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications at frequen-
cies to 1.0 GHz. The high gain and broadband performance of these devices
make them ideal for large–signal, common source amplifier applications in 12.5
and 28 volt mobile, portable and base station equipment.
Guaranteed Performance @ 945 MHz, 28 Volts
Output Power = 7.5 Watts
Power Gain = 15.5 dB
Efficiency = 30%
Capable of Handling 5:1 VSWR @ 28 Vdc,
945 MHz, 7.5 Watts CW Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal
Impedance Parameters
S–Parameter Characterization at High Bias Levels
Suitable for 12.5 Volt Application
Available in Tape and Reel. R1 Suffix = 500 Units per
12 mm, 7 inch Reel.
LDMOS Models Available at
http://www.motorola.com/semiconductors/rf/models/
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
65
Vdc
Gate–Source Voltage
VGS
±20
Vdc
Drain Current — Continuous
ID
2.0
Adc
Total Device Dissipation @ TC = 70°C
Derate above 70
°C
PD
36
0.278
Watts
W/
°C
Storage Temperature Range
Tstg
– 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
5.42
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF181/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 2000
MRF181SR1
MRF181ZR1
1.0 GHz, 7.5 W, 28 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 458B–02, STYLE 1
(MRF181SR1)
CASE 458C–02, STYLE 1
(MRF181ZR1)
Motorola, Inc. 2000
G
D
S
REV 1
相關PDF資料 |
PDF描述 |
|---|---|
| MRF183LSR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF183R1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF183R1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF183SR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF183SR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MRF182 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
| MRF182S | 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, SOT-391B 制造商:Njs 功能描述:MOSFET Transistor, N-Channel, SOT-391B |
| MRF183 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
| MRF183LSR1 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF183R1 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
發布緊急采購，3分鐘左右您將得到回復。