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參數(shù)資料
| 型號(hào)： | MRF183R1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-360, CASE 360B-05, 2 PIN |
| 文件頁(yè)數(shù)： | 7/12頁(yè) |
| 文件大小： | 335K |
| 代理商： | MRF183R1 |
LIFETIME
BUY
LAST
ORDER
31JUL04
LAST
SHIP
31JAN05
MRF183R1 MRF183LSR1
MOTOROLA RF DEVICE DATA
P
out
,OUTPUT
POWER
(W
ATTS)
Pout, OUTPUT POWER (WATTS)
IMD,
INTERMODULA
TION
DIST
ORTION
(dBc)
Pout, OUTPUT POWER (WATTS) PEP
20
30
45
50
0.1
1
10
100
20
020
30
40
50
Pout, OUTPUT POWER (WATTS) PEP
IMD,
INTERMODULA
TION
DIST
ORTION
(dBc)
TYPICAL CHARACTERISTICS
Figure 2. Intermodulation Distortion Products
versus Output Power
Figure 3. Intermodulation Distortion versus
Output Power
30
40
50
60
70
5th
7th
VDD = 28 Vdc
IDQ = 250 mA
f1 = 945 MHz
f2 = 945.1 MHz
IDQ = 75 mA
150 mA
450 mA
16
14.5
13
1
10
100
G
pe
,POWER
GAIN
(dB)
Figure 4. Power Gain versus Output Power
50
20
0
1.5
3
Pin, INPUT POWER (WATTS)
P out
,OUTPUT
POWER
(W
ATTS)
Figure 5. Output Power versus Input Power
VDD = 28 Vdc
IDQ = 75 mA
f = 945 MHz
80
15
19
23
35
VDS, DRAIN VOLTAGE (VOLTS)
P
out
,OUTPUT
POWER
(W
ATTS)
Figure 6. Output Power versus Drain Bias
Supply Voltage
60
40
0
50
0
0.5
1
5
VGS, GATE BIAS (VOLTS)
Figure 7. Output Power versus Gate Bias
Supply Voltage
30
10
0
2
3.5
Gpe
Pout
TYPICAL DEVICE SHOWN
VGS(th) TYPICAL = 3.13 V
3rd ORDER
10
VDD = 28 Vdc
f1 = 945 MHz
f2 = 945.1 MHz
250 mA
25
40
35
285 mA
150 mA
VDD = 28 Vdc
f = 945 MHz
75 mA
15.5
G
pe
,POWER
GAIN
(dB)
40
10
30
60
0.5
2
3.5
16
12
15
10
14
1.0 W
2.0 W
Pin = 4.0 W
VDD = 28 Vdc
Pin = 1.5 W
f1 = 945 MHz
17
21
31
27
33
25
29
70
50
20
40
20
2.5
3
4
4.5
1.5
IDQ = 450 mA
35
45
55
65
25
15
25
35
545
14
13.5
15
11
13
30
10
45
25
5
35
15
1
2.5
4
90
VDD = 28 Vdc
IDQ = 75 mA
f1 = 945 MHz
55
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| MRF183S | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
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| MRF184SR1 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:N-Channel Enhancement-Mode Lateral MOSFETs |
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