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參數資料
| 型號： | MRF185 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF MOSFET(射頻MOS場效應管) |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-860, CASE 375B-04, 5 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 63K |
| 代理商： | MRF185 |
Product Is Not Recommended for New Design.
The next generation of higher performance products are in development. Visit our online
Selector Guides (http://mot–sps.com/rf/sg/sg.html) for scheduled introduction dates.
1
MRF185
The RF MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFET
High Gain, Rugged Device
Broadband Performance from HF to 1 GHz
Bottom Side Source Eliminates DC Isolators, Reducing Common
Mode Inductances
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VGS
Tstg
TJ
PD
65
Vdc
Gate–Source Voltage
±
20
Vdc
Storage Temperature Range
– 65 to +150
°
C
Operating Junction Temperature
200
°
C
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
250
1.45
Watts
W/
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
0.7
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 V, ID = 1 Adc)
V(BR)DSS
65
–
–
Vdc
Zero Gate Voltage Drain Current
(VDS = 28 V, VGS = 0 V)
IDSS
–
–
1
μ
Adc
Gate–Source Leakage Current
(VGS = 20 V, VDS = 0 V)
IGSS
–
–
1
μ
Adc
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF185/D
SEMICONDUCTOR TECHNICAL DATA
85 WATTS, 1.0 GHz
28 VOLTS
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFET
CASE 375B–02, STYLE 2
Motorola, Inc. 2000
D
G
S
(FLANGE)
D
G
REV 3
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PDF描述 |
|---|---|
| MRF186 | RF MOSFET(射頻MOS場效應管) |
| MRF187S | RF MOSFET(射頻MOS場效應管) |
| MRF187 | RF POWER FIELD EFFECT TRANSISTORS |
| MRF187R3 | ER 16 16S D/C PLAS |
| MRF187SR3 | RF POWER FIELD EFFECT TRANSISTORS |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MRF185_02 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:N-Channel Enhancement-Mode Lateral MOSFET |
| MRF186 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:The RF MOSFET Line RF POWER FIELD-EFFECT TRANSISTOR Channel Enhancement?Mode Lateral MOSFET |
| MRF187 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF187R3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF187S | 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, SOT-391BVAR |
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