- 您現在的位置：買賣IC網 > PDF目錄371144 > MRF20060RS (MOTOROLA INC) NPN Silicon RF Power Transistor(NPN硅射頻功率晶體管) PDF資料下載
參數資料
| 型號： | MRF20060RS |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN Silicon RF Power Transistor(NPN硅射頻功率晶體管) |
| 中文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CASE 451A-03, 3 PIN |
| 文件頁數： | 1/12頁 |
| 文件大小： | 97K |
| 代理商： | MRF20060RS |
1
MRF20060R MRF20060RS
MOTOROLA RF DEVICE DATA
Motorola, Inc. 2000
The RF Sub–Micron Bipolar Line
The MRF20060R and MRF20060RS are designed for class AB broadband
commercial and industrial applications at frequencies from 1800 to 2000 MHz.
The high gain, excellent linearity and broadband performance of these devices
make them ideal for large–signal, common emitter class AB amplifier applica-
tions. These devices are suitable for frequency modulated, amplitude modulated
and multi–carrier base station RF power amplifiers.
Guaranteed Two–tone Performance at 2000 MHz, 26 Volts
Output Power — 60 Watts (PEP)
Power Gain — 9 dB
Efficiency — 33%
Intermodulation Distortion — –30 dBc
Characterized with Series Equivalent Large–Signal Impedance Parameters
S–Parameter Characterization at High Bias Levels
Excellent Thermal Stability
Capable of Handling 3:1 VSWR @ 26 Vdc, 2000 MHz, 60 Watts (PEP)
Output Power
Designed for FM, TDMA, CDMA and Multi–Carrier Applications
Test Fixtures Available at: http://mot–sps.com/rf/designtds/
Note:
Not suitable for class A operation.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage (IB = 0 mA)
Collector–Emitter Voltage
VCEO
VCES
VCBO
VCER
VEB
IC
PD
25
Vdc
60
Vdc
Collector–Base Voltage
60
Vdc
Collector–Emitter Voltage (RBE = 100 Ohm)
Base–Emitter Voltage
30
Vdc
– 3
Vdc
Collector Current – Continuous
8
Adc
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
250
1.43
Watts
W/
°
C
Storage Temperature Range
Tstg
TJ
– 65 to +150
°
C
Operating Junction Temperature
200
°
C
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
°
C/W
Thermal Resistance, Junction to Case
R
θ
JC
0.7
Order this document
by MRF20060R/D
SEMICONDUCTOR TECHNICAL DATA
60 W, 2000 MHz
RF POWER
BROADBAND
NPN BIPOLAR
CASE 451–06, STYLE 1
(MRF20060R)
CASE 451A–03, STYLE 1
(MRF20060RS)
REV 3
相關PDF資料 |
PDF描述 |
|---|---|
| MRF20060 | RF POWER BROADBAND NPN BIPOLAR |
| MRF20060S | RF POWER BROADBAND NPN BIPOLAR |
| MRF21010 | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF21010LR1 | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF21010LSR1 | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MRF20060S | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER BROADBAND NPN BIPOLAR |
| MRF206 | 功能描述:SW ROTARY DP 2-6POS PC RoHS:是 類別:開關 >> 旋轉 系列:MR RoHS指令信息:435123-1 Statement of Compliance 產品目錄繪圖:Rotary Switch 特色產品:TE Connectivity Switches 3D 型號:435123-1.pdf 標準包裝:1 系列:6000 位置數:10 層數:1 每層電極數:- 每層電路:BCD 觸點額定電壓:0.125A @ 115VAC 觸動器類型:旋鈕 安裝類型:PCB，通孔 端接類型:PC 引腳 方向:垂直 擺角:36° 產品目錄頁面:2570 (CN2011-ZH PDF) 其它名稱:435123-1-ND450-1183A26201A26201-ND |
| MR-F206 | 制造商:Nihon Kaiheiki Ind Co Ltd 功能描述:5 0.4W Screwdriver 30000 Gold 0.4W 70 -10 12.6mm 12.6mm 8.2mm 制造商:Nihon Dempa Kogyo Co (NDK) 功能描述:Rotary Switch,Small Size |
| MRF206-A | 制造商:NKK 制造商全稱:Nihon Kaiheiki Industry Co. Ltd. 功能描述:Half-Inch Diameter Process Sealed Rotaries |
| MRF206-AA | 制造商:NKK 制造商全稱:Nihon Kaiheiki Industry Co. Ltd. 功能描述:Half-Inch Diameter Process Sealed Rotaries |
發布緊急采購，3分鐘左右您將得到回復。