- 您現在的位置：買賣IC網 > PDF目錄358220 > MRF21090SR3 (MOTOROLA INC) RF Power Field Effect Transistors PDF資料下載
參數資料
| 型號： | MRF21090SR3 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF Power Field Effect Transistors |
| 中文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-880S, CASE 465C-02, 2 PIN |
| 文件頁數： | 1/8頁 |
| 文件大小： | 381K |
| 代理商： | MRF21090SR3 |
1
MRF21090R3 MRF21090SR3
Motorola, Inc. 2004
The RF Sub-Micron MOSFET Line
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for W-CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications.
Typical W-CDMA Performance for 2140 MHz, 28 Volts
4.096 MHz BW @ 5 MHz offset, 1 PERCH 15 DTCH:
Output Power — 11.5 Watts
Efficiency — 16%
Gain — 12.2 dB
ACPR — -45 dBc
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2110 MHz, 90 Watts CW
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large-Signal Impedance Parameters
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
65
Vdc
Gate-Source Voltage
V
GS
+15, -0.5
Vdc
Total Device Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
270
1.54
Watts
W/
°
C
Storage Temperature Range
T
stg
- 65 to +150
°
C
Operating Junction Temperature
T
J
200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
θ
JC
0.65
°
C/W
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF21090/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF21090R3
MRF21090SR3
2170 MHz, 90 W, 28 V
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 465C-02, STYLE 1
NI-880S
MRF21090SR3
CASE 465B-03, STYLE 1
NI-880
MRF21090R3
REV 6
相關PDF資料 |
PDF描述 |
|---|---|
| MRFI0805-18NJB | 1 ELEMENT, 0.018 uH, GENERAL PURPOSE INDUCTOR, SMD |
| MRFI0805-1R2KB | 1 ELEMENT, 1.2 uH, GENERAL PURPOSE INDUCTOR, SMD |
| MRFI1008-100KB | 1 ELEMENT, 10 uH, GENERAL PURPOSE INDUCTOR, SMD |
| MRFI1008-R33GB | 1 ELEMENT, 0.33 uH, GENERAL PURPOSE INDUCTOR, SMD |
| MRFI1008-R47JB | 1 ELEMENT, 0.47 uH, GENERAL PURPOSE INDUCTOR, SMD |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MRF21120 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:The RF Sub-Micron MOSFET Line RF Power Field Effect Trasistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF21120R6 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF21125 | 制造商:Motorola Inc 功能描述: |
| MRF21125R3 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
| MRF21125S | 制造商:Motorola Inc 功能描述: 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, SOT-391BVAR |
發布緊急采購，3分鐘左右您將得到回復。