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參數資料
| 型號： | MRF21120 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF Power MOSFETs(RF功率MOS場效應管) |
| 中文描述： | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-1230, CASE 375D-04, 5 PIN |
| 文件頁數： | 1/12頁 |
| 文件大小： | 162K |
| 代理商： | MRF21120 |
1
MRF21120 MRF21120S
MOTOROLA RF DEVICE DATA
Motorola, Inc. 2000
The RF Sub–Micron MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for W–CDMA base station applications at frequencies from 2110 to
2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applica-
tions. To be used in class AB for PCN–PCS/cellular radio and WLL applications.
W–CDMA Performance @ –45 dBc, 5 MHz Offset, 15 DTCH, 1 Perch
Output Power — 14 Watts (Avg.)
Power Gain — 11.5 dB
Efficiency — 16%
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency, High Linearity
Integrated ESD Protection: Class 2 Human Body Model, Class M3
Machine Model
Ease of Design for Gain and Insertion Phase Flatness
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2170 MHz, 120 Watts (CW)
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal Impedance Parameters
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VGS
PD
65
Vdc
Gate–Source Voltage
+15, –0.5
Vdc
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
389
2.22
Watts
W/
°
C
Storage Temperature Range
Tstg
TJ
–65 to +150
°
C
Operating Junction Temperature
200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
0.45
°
C/W
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF21120/D
SEMICONDUCTOR TECHNICAL DATA
2170 MHz, 120 W, 28 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 375D–01, STYLE 2
(MRF21120)
CASE 375E–01, STYLE 2
(MRF21120S)
REV 1
相關PDF資料 |
PDF描述 |
|---|---|
| MRF21125 | RF POWER FIELD EFFECT TRANSISTORS |
| MRF21125SR3 | RF POWER FIELD EFFECT TRANSISTORS |
| MRF21125S | RF POWER FIELD EFFECT TRANSISTORS |
| MRF255PHT | RF Power Field-Effect Transistor |
| MRF255 | N-CHANNEL BROADBAND RF POWER FET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MRF21120R6 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF21125 | 制造商:Motorola Inc 功能描述: |
| MRF21125R3 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
| MRF21125S | 制造商:Motorola Inc 功能描述: 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, SOT-391BVAR |
| MRF21125SR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
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