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參數資料
| 型號： | MRF281 |
| 廠商： | Motorola, Inc. |
| 英文描述： | RF POWER FIELD EFFECT TRANSISTORS |
| 中文描述： | 射頻電源場效應晶體管 |
| 文件頁數： | 1/8頁 |
| 文件大?。?/td> | 311K |
| 代理商： | MRF281 |
1
MRF281SR1 MRF281ZR1
Motorola, Inc. 2002
The RF Sub–Micron MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for digital and analog cellular PCN and PCS base station
applications with frequencies from 1000 to 2500 MHz. Characterized for
operation Class A and Class AB at 26 volts in commercial and industrial
applications.
Specified Two–Tone Performance @ 1930 and 2000 MHz, 26 Volts
Output Power — 4 Watts PEP
Power Gain — 11 dB
Efficiency — 30%
Intermodulation Distortion — –29 dBc
Capable of Handling 10:1 VSWR, @ 26 Vdc,
2000 MHz, 4 Watts CW Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal Impedance Parameters
S–Parameter Characterization at High Bias Levels
Available in Tape and Reel. R1 Suffix = 500 Units per
12 mm, 7 inch Reel.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
V
DSS
65
Vdc
Gate–Source Voltage
V
GS
±
20
Vdc
Total Device Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
20
0.115
Watts
W/
°
C
Storage Temperature Range
T
stg
–65 to +150
°
C
Operating Junction Temperature
T
J
200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
5.74
°
C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(V
GS
= 0, I
D
= 10
μ
Adc)
V
(BR)DSS
65
74
—
Vdc
Zero Gate Voltage Drain Current
(V
DS
= 28 Vdc, V
GS
= 0)
I
DSS
—
—
10
μ
Adc
Gate–Source Leakage Current
(V
GS
= 20 Vdc, V
DS
= 0)
I
GSS
—
—
1
μ
Adc
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF281/D
SEMICONDUCTOR TECHNICAL DATA
2000 MHz, 4 W, 26 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 458B–03, STYLE 1
(NI–200S)
(MRF281SR1)
CASE 458C–03, STYLE 1
(NI–200Z)
(MRF281ZR1)
REV 3
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| MRF281ZR1 | RF POWER FIELD EFFECT TRANSISTORS |
| MRF9030 | RF POWER FIELD EFFECT TRANSISTORS |
| MRF9030R1 | RF POWER FIELD EFFECT TRANSISTORS |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MRF281SR1 | 功能描述:IC MOSFET RF N-CHAN NI-200S RoHS:是 類別:分離式半導體產品 >> RF FET 系列:- 產品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數據:- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF281SR1_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF281ZR1 | 功能描述:IC MOSFET RF N-CHAN NI-200Z RoHS:是 類別:分離式半導體產品 >> RF FET 系列:- 產品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數據:- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF282 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF282S | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
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