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參數資料
| 型號： | MRF3010 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | LATERAL N-CHANNEL BROADBAND RF POWER MOSFET |
| 中文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件頁數： | 1/8頁 |
| 文件大小： | 106K |
| 代理商： | MRF3010 |
1
MRF3010
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1998
The RF MOSFET Line
N–Channel Enhancement–Mode Lateral
MOSFET
Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB,
CW amplifier applications.
Guaranteed Performance @ 1.6 GHz, 28 Volts
Output Power = 10 Watts
Minimum Gain = 9.5 dB @ 10 Watts
Minimum Efficiency = 45% @ 10 Watts
High Gain, Rugged Device
Bottom Side Source Eliminates DC Isolators,
Reducing Common Mode Inductances
Broadband Performance of This Device Makes It
Ideal for Applications from 800 to 1700 MHz,
Common–Source Class AB Operation.
Typical Performance at Class A Operation:
Pout = 2 Watts, VDD = 28 Volts, IDQ = 1 A,
Gain = 12.5 dB, IMD = –32 dB
Characterized with Small–Signal S–Parameters from 500 to 2500 MHz
Capable of Handling 30:1 VSWR, @ 28 Vdc
Circuit Board Available Upon Request by Contacting RF Tactical Marketing
in Phoenix, AZ
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VGS
Tstg
TJ
65
Vdc
Gate–Source Voltage
±
20
Vdc
Storage Temperature Range
– 65 to +150
°
C
Operating Junction Temperature
200
°
C
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 1
μ
A)
V(BR)DSS
65
–
–
Vdc
Zero Gate Voltage Drain Current
(VDS = 28 V, VGS = 0)
IDSS
–
–
10
μ
Adc
Gate–Source Leakage Current
(VGS = 20 V, VDS = 0)
IGSS
–
–
1
μ
Adc
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF3010/D
SEMICONDUCTOR TECHNICAL DATA
10 W, 1.6 GHz, 28 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFET
CASE 360B–01, STYLE 1
G
D
S
REV 1
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