- 您現在的位置：買賣IC網 > PDF目錄98037 > MRF5P20180HR6 (FREESCALE SEMICONDUCTOR INC) 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF資料下載
參數資料
| 型號： | MRF5P20180HR6 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-1230, CASE 375D-05, 4 PIN |
| 文件頁數： | 1/12頁 |
| 文件大小： | 397K |
| 代理商： | MRF5P20180HR6 |
MRF5P20180HR6
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for W-CDMA base station applications with frequencies from 1930
to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN-PCS/cellular radio and WLL applications.
Typical 2-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1600 mA,
Pout = 38 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84
MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 14 dB
Drain Efficiency — 26%
IM3 @ 10 MHz Offset — -37.5 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — -41 dBc in 3.84 MHz Channel Bandwidth
Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 120 Watts CW
Output Power
Features
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 VDD Operation
Integrated ESD Protection
Lower Thermal Resistance Package
Low Gold Plating Thickness on Leads, 40μ″ Nominal.
RoHS Compliant
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +65
Vdc
Gate-Source Voltage
VGS
-0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
530
3.0
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
CW Operation @ TC = 25°C
Derate above 25°C
CW
185
1.2
W
W/°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 77°C, 120 W CW
Case Temperature 72°C, 38 W CW
RθJC
0.33
0.35
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MRF5P20180HR6
Rev. 1, 5/2006
Freescale Semiconductor
Technical Data
MRF5P20180HR6
1930-1990 MHz, 38 W AVG., 28 V
2 x W-CDMA
LATERAL N-CHANNEL
RF POWER MOSFET
CASE 375D-05, STYLE 1
NI-1230
Freescale Semiconductor, Inc., 2006. All rights reserved.
相關PDF資料 |
PDF描述 |
|---|---|
| MRF5P21045NR1 | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF5P21240HR6 | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF5S19060MBR1 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| MRF5S19060MR1 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| MRF5S19060NR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MRF5P20180HR6_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF5P20180R6 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTOR |
| MRF5P21045NR1 | 功能描述:射頻MOSFET電源晶體管 HV5 2170MHZ 10W TO270WB4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF5P21180 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF5P21180HR5 | 功能描述:射頻MOSFET電源晶體管 HV5 38W WCDMA NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
發布緊急采購，3分鐘左右您將得到回復。