- 您現在的位置：買賣IC網 > PDF目錄98037 > MRF5S19090HSR3 (FREESCALE SEMICONDUCTOR INC) L BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF資料下載
參數資料
| 型號： | MRF5S19090HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN |
| 文件頁數： | 1/12頁 |
| 文件大小： | 461K |
| 代理商： | MRF5S19090HSR3 |
A
R
C
H
IV
E
IN
F
O
R
M
A
T
IO
N
A
R
C
H
IV
E
IN
F
O
R
M
A
T
IO
N
MRF5S19090HR3 MRF5S19090HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications.
Typical 2--Carrier N--CDMA Performance: VDD = 28 Volts, IDQ = 850 mA,
Pout = 18 Watts Avg., Full Frequency Band, IS--95 CDMA (Pilot, Sync,
Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz.
PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 14.5 dB
Drain Efficiency — 25.8%
IM3 @ 2.5 MHz Offset — --37 dBc in 1.2288 MHz Bandwidth
ACPR @ 885 kHz Offset — --51 dB in 30 kHz Bandwidth
Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 90 Watts CW
Output Power
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 VDD Operation
Integrated ESD Protection
Lower Thermal Resistance Package
Low Gold Plating Thickness on Leads, 40″ Nominal.
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
266
1.52
W
W/°C
Storage Temperature Range
Tstg
--65 to +200
°
C
Case Operating Temperature
TC
150
°
C
Operating Junction Temperature
TJ
200
°
C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 65 W CW
Case Temperature 78°C, 18 W CW
RθJC
0.66
0.68
°
C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Document Number: MRF5S19090H
Rev. 2, 5/2006
Freescale Semiconductor
Technical Data
MRF5S19090HR3
MRF5S19090HSR3
1930--1990 MHz, 18 W AVG., 28 V
2 x N--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 465--06, STYLE 1
NI--780
MRF5S19090HR3
CASE 465A--06, STYLE 1
NI--780S
MRF5S19090HSR3
Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
相關PDF資料 |
PDF描述 |
|---|---|
| MRF5S19090LSR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF5S19090LR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF5S19090L | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF5S19100LR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF5S19100LSR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MRF5S19090HSR5 | 功能描述:MOSFET RF N-CHAN 28V 18W NI-780S RoHS:是 類別:分離式半導體產品 >> RF FET 系列:- 產品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數據:- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF5S19090LR3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:1990 MHz, 18 W AVG 2 x N-CDMA, 28 V LATERAL N-CHANNEL RF POWER MOSFETs |
| MRF5S19090LSR3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:1990 MHz, 18 W AVG 2 x N-CDMA, 28 V LATERAL N-CHANNEL RF POWER MOSFETs |
| MRF5S19100HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S19100HR | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
發布緊急采購，3分鐘左右您將得到回復。