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參數資料
| 型號： | MRF5S21100LSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-780S, CASE 465A-06, 2 PIN |
| 文件頁數： | 1/12頁 |
| 文件大小： | 390K |
| 代理商： | MRF5S21100LSR3 |
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INFORMA
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Fr
eescale
Semiconductor
,Inc.
MRF5S21100LR3 and MRF5S21100LSR3 replaced by MRF5S21100HR3 and
MRF5S21100HSR3. “H” suffix indicates lower thermal resistance package.
Freescale Semiconductor, Inc.
MRF5S21100LR3 MRF5S21100LSR3
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
The RF MOSFET Line
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for W-CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
tions. To be used in Class AB for PCN - PCS/cellular radio and WLL
applications.
Typical 2-carrier W-CDMA Performance for VDD = 28 Volts,
IDQ = 1050 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth =
3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 -5 MHz
and f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW
@ f1 -10 MHz and f2 +10 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability
on CCDF.
Output Power — 23 Watts Avg.
Power Gain — 13.5 dB
Efficiency — 26%
IM3 — -37 dBc
ACPR — -40 dBc
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 100 Watts CW
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large-Signal Impedance Parameters
Qualified Up to a Maximum of 32 VDD Operation
Low Gold Plating Thickness on Leads. L Suffix Indicates 40″ Nominal.
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
65
Vdc
Gate-Source Voltage
VGS
-0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
250
1.43
Watts
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value (1)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 100 W CW
Case Temperature 80°C, 23 W CW
RθJC
0.70
0.76
°C/W
(1) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf.
Select Documentation/Application Notes - AN1955.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF5S21100L/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF5S21100LR3
MRF5S21100LSR3
2170 MHz, 23 W AVG.,
2 x W-CDMA, 28 V
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 465-06, STYLE 1
NI-780
MRF5S21100LR3
CASE 465A-06, STYLE 1
NI-780S
MRF5S21100LSR3
Motorola, Inc. 2004
For More Information On This Product,
Go to: www.freescale.com
REV 1
相關PDF資料 |
PDF描述 |
|---|---|
| MRF5S21100LR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF5S21100L | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF5S21130HR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF5S21130HSR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF5S21130HR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MRF5S21130 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S21130HR3 | 功能描述:射頻MOSFET電源晶體管 HV5 LDMOS WCDMA NI880 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF5S21130HR5 | 功能描述:射頻MOSFET電源晶體管 HV5 LDMOS WCDMA NI880 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF5S21130HS | 制造商:Motorola Inc 功能描述: |
| MRF5S21130HSR3 | 功能描述:射頻MOSFET電源晶體管 HV5 LDMOS WCDMA NI880 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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