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參數資料
| 型號： | MRF5S9100NR1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA |
| 封裝： | PLASTIC, CASE 1486-03, 4 PIN |
| 文件頁數： | 1/12頁 |
| 文件大小： | 426K |
| 代理商： | MRF5S9100NR1 |
MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1
MOTOROLA RF DEVICE DATA
The RF MOSFET Line
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies up to 1.0 GHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 26 volt base station equipment.
Typical Single-Carrier N-CDMA Performance @ 880 MHz, VDD = 26 Volts,
IDQ = 950 mA, Pout = 20 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13)
Power Gain — 19.5 dB
Drain Efficiency — 28%
ACPR @ 750 kHz Offset — -46.8 dBc @ 30 kHz Bandwidth
Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 100 Watts CW
Output Power
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched, Controlled Q, for Ease of Use
Qualified Up to a Maximum of 32 VDD Operation
Integrated ESD Protection
N Suffix Indicates Lead-Free Terminations
200°C Capable Plastic Package
TO-270 WB-4 in Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch
Reel.
TO-272 WB-4 in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch
Reel.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
68
Vdc
Gate-Source Voltage
VGS
- 0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
336
1.92
Watts
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value (1)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 20 W CW
RθJC
0.52
°C/W
(1) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf.
Select Documentation/Application Notes - AN1955.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF5S9100/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
880 MHz, 20 W AVG., 26 V
SINGLE N-CDMA
LATERAL N-CHANNEL
RF POWER MOSFETs
MRF5S9100NR1
MRF5S9100NBR1
MRF5S9100MR1
MRF5S9100MBR1
CASE 1486-03, STYLE 1
TO-270 WB-4
PLASTIC
MRF5S9100NR1(MR1)
CASE 1484-02, STYLE 1
TO-272 WB-4
PLASTIC
MRF5S9100NBR1(MBR1)
Motorola, Inc. 2004
REV 1
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| MRF5S9101MR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MRF5S9101MBR1 | 功能描述:MOSFET RF N-CH 26V 100W TO2724 RoHS:否 類別:分離式半導體產品 >> RF FET 系列:- 產品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數據:- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF5S9101MR1 | 功能描述:MOSFET RF N-CH 26V 100W TO2704 RoHS:是 類別:分離式半導體產品 >> RF FET 系列:- 產品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數據:- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF5S9101N | 制造商:-- 功能描述:MOSFET Transistor, N-Channel, TO-270 |
| MRF5S9101NBR1 | 功能描述:射頻MOSFET電源晶體管 100W 900MHZ26V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF5S9101NR1 | 功能描述:射頻MOSFET電源晶體管 100W 900MHZ26V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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