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參數資料
| 型號： | MRF6401 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF LINEAR POWER TRANSISTOR |
| 中文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CASE 305C-02, 4 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 111K |
| 代理商： | MRF6401 |
1
MRF6401
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1995
The RF Line
The MRF6401 is designed for Class A common emitter, linear power
amplifiers in the 1.0–2.0 GHz frequency range. It has been specifically
designed for use in Personal Communications Network (PCN) base station and
INMARSAT Standard M applications.
Specified 20 Volts, 1.66 GHz Characteristics:
Output Power — 0.5 Watts
Gain — 10 dB Min
Class A Operation
Specified 20 Volts, 1.88 GHz Characteristics:
Output Power — 0.5 Watts
Gain — 9.0 dB Min
Class A Operation
Circuit Board Photomaster Available by Ordering Document
MRF6401PHT/D from Motorola Literature Distribution.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
TJ
PD
22
Vdc
Collector–Base Voltage
45
Vdc
Emitter–Base Voltage
3.5
Vdc
Operating Junction Temperature
200
°
C
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
5.8
0.033
Watts
W/
°
C
Storage Temperature Range
Tstg
–65 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case (1)
R
θ
JC
30
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mAdc, RB = 75
)
V(BR)CER
28
—
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 0.25 mAdc)
V(BR)EBO
3.5
—
—
Vdc
Collector–Base Breakdown Voltage
(IC = 1 mAdc)
V(BR)CBO
45
—
—
Vdc
(1) Thermal resistance is determined under specified RF operating condition.
Order this document
by MRF6401/D
SEMICONDUCTOR TECHNICAL DATA
0.5 W, 1.0 to 2.0 GHz
RF LINEAR
POWER TRANSISTOR
CASE 305C–02, STYLE 1
SOE200–PILL
REV 1
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相關代理商/技術參數 |
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