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參數(shù)資料
型號(hào): MRF6404K
廠商: MOTOROLA INC
元件分類: 功率晶體管
英文描述: RF POWER TRANSISTOR NPN SILICON
中文描述: L BAND, Si, NPN, RF POWER TRANSISTOR
文件頁數(shù): 1/10頁
文件大小: 276K
代理商: MRF6404K
1
MRF6404 MRF6404K
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1996
The RF Line
The MRF6404 is designed for 26 volts microwave large signal, common
emitter, class AB linear amplifier applications operating in the range 1.8 to
2.0 GHz.
Specified 26 Volts, 1.88 GHz Characteristics
Output Power — 30 Watts
Gain — 7.5 dB Min @ 30 Watts
Efficiency — 38% Min @ 30 Watts
Characterized with Series Equivalent Large–Signal Parameters from
1.8 to 2.0 GHz
To be used in Class AB for DCS1800 and PCS1900/Cellular Radio
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCES
VEBO
IC
PD
24
Vdc
Collector–Emitter Voltage
60
Vdc
Emitter–Base Voltage
4
Vdc
Collector–Current — Continuous
10
Adc
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
125
0.71
Watts
W/
°
C
Storage Temperature Range
Tstg
TJ
–65 to +150
°
C
Operating Junction Temperature
200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case (1)
R
θ
JC
1.4
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 50 mA, IB = 0)
Emitter–Base Breakdown Voltage (IE = 10 mAdc)
Collector–Base Breakdown Voltage (IC = 50 mAdc)
Collector–Base Breakdown Voltage (IC = 50 mAdc, RBE = 75
)
Collector Cutoff Current (VCE = 30 V, VBE = 0)
ON CHARACTERISTICS
V(BR)CEO
V(BR)EBO
V(BR)CES
V(BR)CER
ICES
24
29
Vdc
4
5
Vdc
60
68
Vdc
40
56
Vdc
10
mA
DC Current Gain (IC = 1 Adc, VCE = 5 Vdc)
(1) Thermal resistance is determined under specified RF operating condition.
hFE
20
50
120
Order this document
by MRF6404/D
SEMICONDUCTOR TECHNICAL DATA
30 W, 1.88 GHz
RF POWER TRANSISTOR
NPN SILICON
CASE 395C–01, STYLE 1
REV 2
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