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參數(shù)資料
| 型號： | MRF654 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF POWER TRANSISTOR NPN SILICON |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 105K |
| 代理商： | MRF654 |
1
MRF654
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
The RF Line
. . . designed for 12.5 Volt UHF large–signal amplifier applications in industrial
and commercial FM equipment operating to 512 MHz.
Specified 12.5 Volt, 512 MHz Characteristics
Output Power = 15 W
Minimum Gain = 7.8 dB
Efficiency = 55%
Built–In Matching Network for Broadband Operation
Gold Metallized, Emitter Ballasted for Long Life and Reliability
Capable of 20:1 VSWR Load Mismatch at 15.5 V Supply Voltage
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
PD
16
Vdc
Collector–Base Voltage
36
Vdc
Emitter–Base Voltage
4.0
Vdc
Collector Current — Continuous
4.0
Adc
Total Device Dissipation @ TA = 25
°
C
Derate above 25
°
C
44
0.25
Watts
W/
°
C
Storage Temperature Range
Tstg
–65 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
4.0
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 25 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage
(IC = 25 mAdc, VBE = 0)
Emitter–Base Breakdown Voltage
(IE = 5.0 mAdc, IC = 0)
Collector–Cutoff Current
(VCE = 15 Vdc, VBE = 0)
V(BR)CEO
16
—
—
Vdc
V(BR)CES
36
—
—
Vdc
V(BR)EBO
4.0
—
—
Vdc
ICES
—
—
2.0
mAdc
(continued)
Order this document
by MRF654/D
SEMICONDUCTOR TECHNICAL DATA
15 W, 470 MHz
RF POWER
TRANSISTOR
NPN SILICON
CASE 244–04, STYLE 1
REV 6
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF658 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER TRANSISTOR NPN SILICON |
| MRF6P18190HR5 | 功能描述:射頻MOSFET電源晶體管 HV6 1.8GHZ 44W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6P18190HR6 | 功能描述:射頻MOSFET電源晶體管 HV6 1.8GHZ 44W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6P21190HR5 | 功能描述:射頻MOSFET電源晶體管 HV6 44W W/CDMA RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6P21190HR6 | 功能描述:射頻MOSFET電源晶體管 HV6 44W W/CDMA RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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