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參數(shù)資料
| 型號(hào)： | MRF6P3300HR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-860C3, CASE 375G-04, 4 PIN |
| 文件頁數(shù)： | 1/24頁 |
| 文件大小： | 993K |
| 代理商： | MRF6P3300HR3 |
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INFORMA
TION
MRF6P3300HR3/HR5 replaced by MRFE6P3300HR3/HR5. Refer to Device Migration
PCN12895 for more details.
MRF6P3300HR3 MRF6P3300HR5
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with fre‐
quencies from 470 to 860 MHz. The high gain and broadband performance of
this device make it ideal for large- signal, common- source amplifier applica‐
tions in 32 volt analog or digital television transmitter equipment.
Typical Narrowband Two-Tone Performance @ 860 MHz: VDD = 32 Volts,
IDQ = 1600 mA, Pout = 270 Watts PEP
Power Gain — 20.2 dB
Drain Efficiency — 44.1%
IMD — -30.8 dBc
Typical Narrowband DVB-T OFDM Performance @ 860 MHz: VDD =
32 Volts, IDQ = 1600 mA, Pout = 60 Watts Avg., 8K Mode, 64 QAM
Power Gain — 20.4 dB
Drain Efficiency — 29%
ACPR @ 3.9 MHz Offset — -57 dBc @ 20 kHz Bandwidth
Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 300 Watts CW
Output Power
Features
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched for Ease of Use
Designed for Push-Pull Operation Only
Qualified Up to a Maximum of 32 VDD Operation
Integrated ESD Protection
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
R5 Suffix = 50 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +68
Vdc
Gate-Source Voltage
VGS
-0.5, +12
Vdc
Storage Temperature Range
Tstg
-65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80
°C, 300 W CW
Case Temperature 82
°C, 220 W CW
Case Temperature 79
°C, 100 W CW
Case Temperature 81
°C, 60 W CW
RθJC
0.23
0.24
0.27
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MRF6P3300H
Rev. 2, 10/2008
Freescale Semiconductor
Technical Data
MRF6P3300HR3
MRF6P3300HR5
470-860 MHz, 300 W, 32 V
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 375G-04, STYLE 1
NI-860C3
Freescale Semiconductor, Inc., 2005-2006, 2008. All rights reserved.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6P3300HR3_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
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| MRF6P9220HR3 | 功能描述:MOSFET RF N-CH 28V 47W NI-860C3 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF6P9220HR3_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6P9220HR3_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
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