- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄98040 > MRF6VP121KHR6 (FREESCALE SEMICONDUCTOR INC) L BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | MRF6VP121KHR6 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, CASE 375D-05, NI-1230, 4 PIN |
| 文件頁數(shù)： | 1/20頁 |
| 文件大小： | 1167K |
| 代理商： | MRF6VP121KHR6 |
MRF6VP121KHR6 MRF6VP121KHSR6
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
RF Power transistors designed for applications operating at frequencies
between 965 and 1215 MHz. These devices are suitable for use in pulsed
applications.
Typical Pulsed Performance: VDD =50 Volts,IDQ = 150 mA, Pout =
1000 Watts Peak (100 W Avg.), f = 1030 MHz, Pulse Width = 128 μsec,
Duty Cycle = 10%
Power Gain — 20 dB
Drain Efficiency — 56%
Capable of Handling 5:1 VSWR, @ 50 Vdc, 1030 MHz, 1000 Watts Peak
Power
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 50 VDD Operation
Integrated ESD Protection
Designed for Push--Pull Operation
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
RoHS Compliant
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +110
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
Document Number: MRF6VP121KH
Rev. 3, 4/2010
Freescale Semiconductor
Technical Data
965--1215 MHz, 1000 W, 50 V
LATERAL N--CHANNEL
BROADBAND
RF POWER MOSFETs
MRF6VP121KHR6
MRF6VP121KHSR6
CASE 375D--05, STYLE 1
NI--1230
MRF6VP121KHR6
PARTS ARE PUSH--PULL
CASE 375E--04, STYLE 1
NI--1230S
MRF6VP121KHSR6
(Top View)
RFoutA/VDSA
31
42 RFoutB/VDSB
RFinA/VGSA
RFinB/VGSB
Figure 1. Pin Connections
Freescale Semiconductor, Inc., 2009--2010. All rights reserved.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF6VP121KHSR6 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF6VP21KHR6 | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF6VP2600HR6 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF6VP3091NR1 | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| MRF6VP3091NBR1 | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6VP121KHSR5 | 制造商:Freescale Semiconductor 功能描述:VHV6 1KW 50V NI1230HS - Tape and Reel 制造商:Freescale Semiconductor 功能描述:LATERAL N-CHANNEL BROADBAND RF POWER MOSFET, 965-1215 MHZ, 1 - Tape and Reel 制造商:Freescale Semiconductor 功能描述:MOSFET RF N-CH 50V NI1230H 制造商:Freescale Semiconductor 功能描述:RF POWER TRANSISTOR LDMOS |
| MRF6VP121KHSR6 | 功能描述:射頻MOSFET電源晶體管 VHV6 1kW 50V NI1230HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6VP21KHR5 | 功能描述:射頻MOSFET電源晶體管 VHV6 225MHZ 1000W NI1230 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6VP21KHR6 | 功能描述:射頻MOSFET電源晶體管 VHV6 225MHZ 1000W NI1230 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6VP21KHR6_10 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。