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參數(shù)資料
| 型號： | MRF6VP41KHSR6 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, CASE 375E-04, NI-1230S, 4 PIN |
| 文件頁數(shù)： | 1/18頁 |
| 文件大小： | 1292K |
| 代理商： | MRF6VP41KHSR6 |
MRF6VP41KHR6 MRF6VP41KHSR6
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed primarily for pulsed wideband applications with frequencies up to
500 MHz. Devices are unmatched and are suitable for use in industrial,
medical and scientific applications.
Typical Pulsed Performance at 450 MHz: VDD =50 Volts,IDQ = 150 mA,
Pout = 1000 Watts Peak (200 W Avg.), Pulse Width = 100 μsec,
Duty Cycle = 20%
Power Gain — 20 dB
Drain Efficiency — 64%
Capable of Handling 10:1 VSWR, @ 50 Vdc, 450 MHz, 1000 Watts Peak
Power
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
CW Operation Capability with Adequate Cooling
Qualified Up to a Maximum of 50 VDD Operation
Integrated ESD Protection
Designed for Push--Pull Operation
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
RoHS Compliant
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +110
Vdc
Gate--Source Voltage
VGS
--6, +10
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
CW Operation @ TC =25°C
Derate above 25°C
CW
1107
4.6
W
W/°C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
Document Number: MRF6VP41KH
Rev. 5, 4/2010
Freescale Semiconductor
Technical Data
MRF6VP41KHR6
MRF6VP41KHSR6
10--500 MHz, 1000 W, 50 V
LATERAL N--CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 375D--05, STYLE 1
NI--1230
MRF6VP41KHR6
PARTS ARE PUSH--PULL
(Top View)
RFoutA/VDSA
31
42 RFoutB/VDSB
RFinA/VGSA
RFinB/VGSB
Figure 1. Pin Connections
CASE 375E--04, STYLE 1
NI--1230S
MRF6VP41KHSR6
Freescale Semiconductor, Inc., 2008--2010. All rights reserved.
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| MRF6VP41KHSR7 | 功能描述:射頻MOSFET電源晶體管 VHV6 450MHZ1000W NI1230S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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| MRF7P20040HR3_10 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs |
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