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參數資料
| 型號： | MRF7S38040HR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, CASE 465I-02, NI-400-240, 3 PIN |
| 文件頁數： | 1/15頁 |
| 文件大小： | 512K |
| 代理商： | MRF7S38040HR3 |
MRF7S38040HR3 MRF7S38040HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for WiMAX base station applications with frequencies up to
3800 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class
AB and Class C amplifier applications.
Typical WiMAX Performance: VDD = 30 Volts, IDQ = 450 mA, Pout =
8 Watts Avg., f = 3400-3600 MHz, 802.16d, 64 QAM 3
/4, 4 bursts, 7 MHz
Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on
CCDF.
Power Gain — 14 dB
Drain Efficiency — 15.6%
Device Output Signal PAR — 8.4 dB @ 0.01% Probability on CCDF
ACPR @ 5.25 MHz Offset — -49 dBc in 0.5 MHz Channel Bandwidth
Capable of Handling 10:1 VSWR, @ 32 Vdc, 3500 MHz, 40 Watts CW
Peak Tuned Output Power
Pout @ 1 dB Compression Point w 40 Watts CW
Features
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate-Source Voltage Range for Improved Class C
Operation
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDS
-0.5, +65
Vdc
Gate-Source Voltage
VGS
-6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 96°C, 39 W CW
Case Temperature 75°C, 8 W CW
RθJC
0.78
0.83
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MRF7S38040H
Rev. 0, 8/2007
Freescale Semiconductor
Technical Data
MRF7S38040HR3
MRF7S38040HSR3
3400 -3600 MHz, 8 W AVG., 30 V
WiMAX
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 465I-02, STYLE 1
NI-400-240
MRF7S38040HR3
CASE 465J-02, STYLE 1
NI-400S-240
MRF7S38040HSR3
Freescale Semiconductor, Inc., 2007. All rights reserved.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MRF7S38040HR5 | 功能描述:射頻MOSFET電源晶體管 3600MHZ 8W 28V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S38040HSR3 | 功能描述:射頻MOSFET電源晶體管 3600MHZ 8W 30V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S38040HSR5 | 功能描述:射頻MOSFET電源晶體管 3600MHZ 8W 30V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S38075HR3 | 功能描述:射頻MOSFET電源晶體管 3600MHZ 12W 30V NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S38075HR5 | 功能描述:射頻MOSFET電源晶體管 3600MHZ 12W 30V NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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